Reference : Absorber composition: A critical parameter for the effectiveness of heat treatments i...
Scientific journals : Article
Engineering, computing & technology : Materials science & engineering
Physics and Materials Science
http://hdl.handle.net/10993/44080
Absorber composition: A critical parameter for the effectiveness of heat treatments in chalcopyrite solar cells
English
Sood, Mohit mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
Elanzeery, Hossam mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
Adeleye, Damilola mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
Lomuscio, Alberto mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
Werner, Florian mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
Ehre, Florian mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
Melchiorre, Michele mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
Siebentritt, Susanne mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
5-Jul-2020
Progress in Photovoltaics
John Wiley & Sons
Yes (verified by ORBilu)
1062-7995
1099-159X
Hoboken
NJ
[en] Post-device heat treatment (HT) in chalcopyrite [Cu(In,Ga)(S,Se)2] solar cells is known to improve the performance of the devices. However, this HT is only beneficial for devices made with absorbers grown under Cu-poor conditions but not under Cu excess.. We present a systematic study to understand the effects of HT on CuInSe2 and CuInS2 solar cells. The study is performed for CuInSe2 solar cells grown under Cu-rich and Cu-poor chemical potential prepared with both CdS and Zn(O,S) buffer layers. In addition, we also study Cu-rich CuInS2 solar cells prepared with the suitable Zn(O,S) buffer layer. For Cu-poor selenide device low-temperature HT leads to passivation of bulk, whereas in Cu-rich devices no such passivation was observed. The Cu-rich devices are hampered by a large shunt. The HT decreases shunt resistance in Cu-rich selenides, whereas it increases shunt resistance in Cu-rich sulfides.. The origin of these changes in device performance was investigated with capacitance-voltage measurement which shows the considerable decrease in carrier concentration with HT in Cu-poor CuInSe2, and temperature dependent current-voltage measurements show the presence of barrier for minority carriers. Together with numerical simulations, these findings support a highly-doped interfacial p+ layer device model in Cu-rich selenide absorbers and explain the discrepancy between Cu-poor and Curich device performance. Our findings provide insights into how the same treatment can have a completely different effect on the device depending on the composition of the absorber.
http://hdl.handle.net/10993/44080
10.1002/pip.3314
https://onlinelibrary.wiley.com/doi/full/10.1002/pip.3314
FnR ; FNR10935404 > Susanne Siebentritt > MASSENA > MAterials for SenSing and ENergy hArvesting > 01/10/2016 > 31/03/2023 > 2016

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