Reference : Absorber composition: A critical parameter for the effectiveness of heat treatments i...

	Document type :	Scientific journals : Article
	Discipline(s) :	Engineering, computing & technology : Materials science & engineering
	Focus Areas :	Physics and Materials Science
	To cite this reference:	http://hdl.handle.net/10993/44080

Title :	Absorber composition: A critical parameter for the effectiveness of heat treatments in chalcopyrite solar cells
Language :	English
Author, co-author :	Sood, Mohit [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
	Elanzeery, Hossam [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
	Adeleye, Damilola [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
	Lomuscio, Alberto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
	Werner, Florian [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
	Ehre, Florian [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
	Melchiorre, Michele [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
	Siebentritt, Susanne [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
Publication date :	5-Jul-2020
Journal title :	Progress in Photovoltaics
Publisher :	John Wiley & Sons
Peer reviewed :	Yes (verified by ORBilu)
ISSN :	1062-7995
e-ISSN :	1099-159X
City :	Hoboken
Country :	NJ
Abstract :	[en] Post-device heat treatment (HT) in chalcopyrite [Cu(In,Ga)(S,Se)2] solar cells is known to improve the performance of the devices. However, this HT is only beneficial for devices made with absorbers grown under Cu-poor conditions but not under Cu excess.. We present a systematic study to understand the effects of HT on CuInSe2 and CuInS2 solar cells. The study is performed for CuInSe2 solar cells grown under Cu-rich and Cu-poor chemical potential prepared with both CdS and Zn(O,S) buffer layers. In addition, we also study Cu-rich CuInS2 solar cells prepared with the suitable Zn(O,S) buffer layer. For Cu-poor selenide device low-temperature HT leads to passivation of bulk, whereas in Cu-rich devices no such passivation was observed. The Cu-rich devices are hampered by a large shunt. The HT decreases shunt resistance in Cu-rich selenides, whereas it increases shunt resistance in Cu-rich sulfides.. The origin of these changes in device performance was investigated with capacitance-voltage measurement which shows the considerable decrease in carrier concentration with HT in Cu-poor CuInSe2, and temperature dependent current-voltage measurements show the presence of barrier for minority carriers. Together with numerical simulations, these findings support a highly-doped interfacial p+ layer device model in Cu-rich selenide absorbers and explain the discrepancy between Cu-poor and Curich device performance. Our findings provide insights into how the same treatment can have a completely different effect on the device depending on the composition of the absorber.
Permalink :	http://hdl.handle.net/10993/44080
DOI :	10.1002/pip.3314
Other URL :	https://onlinelibrary.wiley.com/doi/full/10.1002/pip.3314
FnR project :	FnR ; FNR10935404 > Susanne Siebentritt > MASSENA > MAterials for SenSing and ENergy hArvesting > 01/10/2016 > 31/03/2023 > 2016

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