Reference : Near surface defects: Cause of deficit between internal and external open-circuit vol...
Scientific journals : Article
Physical, chemical, mathematical & earth Sciences : Physics
Physics and Materials Science
http://hdl.handle.net/10993/48951
Near surface defects: Cause of deficit between internal and external open-circuit voltage in solar cells
English
Sood, Mohit mailto [University of Luxembourg > Faculty of Science, Technology and Medicine (FSTM) > Department of Physics and Materials Science (DPHYMS) >]
Urbanaik, Aleksander mailto [Warsaw University of Technology > Faculty of Physics, Warsaw]
Kameni Boumenou, Christian mailto [University of Luxembourg > Faculty of Science, Technology and Medicine (FSTM) > Department of Physics and Materials Science (DPHYMS) >]
Weiss, Thomas mailto [University of Luxembourg > Faculty of Science, Technology and Medicine (FSTM) > Department of Physics and Materials Science (DPHYMS) >]
Elanzeery, Hossam mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
Babbe, Finn mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
Werner, Florian mailto [University of Luxembourg > Faculty of Humanities, Education and Social Sciences (FHSE) > LUCET >]
Melchiorre, Michele mailto [University of Luxembourg > Faculty of Science, Technology and Medicine (FSTM) > Department of Physics and Materials Science (DPHYMS) >]
Siebentritt, Susanne mailto [University of Luxembourg > Faculty of Science, Technology and Medicine (FSTM) > Department of Physics and Materials Science (DPHYMS) >]
12-Oct-2021
Progress in Photovoltaics
John Wiley & Sons
Yes (verified by ORBilu)
1062-7995
1099-159X
Hoboken
NJ
[en] Interface recombination in a complex multilayered thin-film solar structure causes a disparity between the internal open-circuit voltage (VOC,in), measured by photoluminescence, and the external open-circuit voltage (VOC,ex), that is, a VOC deficit. Aspirations to reach higher VOC,ex values require a comprehensive knowledge of the connection between VOC deficit and interface recombination. Here, a near-surface defect model is developed for copper indium di-selenide solar cells grown under Cu-excess conditions. These cell show the typical signatures of interface recombination: a strong disparity between VOC,in and VOC,ex, and extrapolation of the temperature dependent q·VOC,ex to a value below the bandgap energy. Yet, these cells do not suffer from reduced interface bandgap or from Fermi-level pinning. The model presented is based on experimental analysis of admittance and deep-level transient spectroscopy, which show the signature of an acceptor defect. Numerical simulations using the near-surface defects model show the signatures of interface recombination without the need for a reduced interface bandgap or Fermi-level pinning. These findings demonstrate that the VOC,in measurements alone can be inconclusive and might conceal the information on interface recombination pathways, establishing the need for complementary techniques like temperature dependent current–voltage measurements to identify the cause of interface recombination in the devices.
http://hdl.handle.net/10993/48951
10.1002/pip.3483
https://onlinelibrary.wiley.com/doi/10.1002/pip.3483

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