Oxidation as Key Mechanism for Eﬃcient Interface Passivation in Cu(In,Ga)Se2 Thin-Film Solar Cells

Reference : Oxidation as Key Mechanism for Eﬃcient Interface Passivation in Cu(In,Ga)Se2 Thin-Fil...


	Document type :	Scientific journals : Article
	Discipline(s) :	Physical, chemical, mathematical & earth Sciences : Physics
	To cite this reference:	http://hdl.handle.net/10993/43582

Title :	Oxidation as Key Mechanism for Eﬃcient Interface Passivation in Cu(In,Ga)Se2 Thin-Film Solar Cells
Language :	English
Author, co-author :	Werner, Florian [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
	Veith-Wolf, Boris [Institute for Solar Energy Research Hamelin (ISFH) - Germany]
	Spindler, Conrad [University of Luxembourg > Luxembourg Centre for Systems Biomedicine (LCSB) > Physics and Materials Science Research Unit >]
	Barget, Michael [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
	Babbe, Finn [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
	Guillot, Jerome [Luxembourg Institute of Science & Technology - LIST]
	Schmidt, Jan [Institute for Solar Energy Research Hamelin (ISFH) - Germany]
	Siebentritt, Susanne [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
Publication date :	2020
Journal title :	Physical Review Applied
Publisher :	American Physical Society
Peer reviewed :	Yes (verified by ORBi^lu)
Audience :	International
ISSN :	2331-7019
e-ISSN :	2331-7043
City :	College Park
Country :	MD
Permalink :	http://hdl.handle.net/10993/43582
DOI :	10.1103/PhysRevApplied.13.054004

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Open access	2020_Oxidation as Key Mechanism for Eﬃcient Interface Passivation in CuInGaSe2 etc.pdf		Publisher postprint	1.94 MB	View/Open

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