Article (Scientific journals)
Excitation-intensity dependence of shallow and deep-level photoluminescence transitions in semiconductors
Spindler, Conrad; Galvani, Thomas; Wirtz, Ludger et al.
2019In Journal of Applied Physics
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Disciplines :
Physics
Author, co-author :
Spindler, Conrad ;  University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit
Galvani, Thomas ;  University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit
Wirtz, Ludger ;  University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit
Rey, Germain;  University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit
Siebentritt, Susanne ;  University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit
External co-authors :
no
Language :
English
Title :
Excitation-intensity dependence of shallow and deep-level photoluminescence transitions in semiconductors
Publication date :
2019
Journal title :
Journal of Applied Physics
ISSN :
1089-7550
Publisher :
American Institute of Physics, Melville, United States - New York
Peer reviewed :
Peer Reviewed verified by ORBi
Focus Area :
Physics and Materials Science
Available on ORBilu :
since 16 January 2020

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