Reference : Excitation-intensity dependence of shallow and deep-level photoluminescence transitio...
Scientific journals : Article
Physical, chemical, mathematical & earth Sciences : Physics
Physics and Materials Science
http://hdl.handle.net/10993/41634
Excitation-intensity dependence of shallow and deep-level photoluminescence transitions in semiconductors
English
Spindler, Conrad mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit]
Galvani, Thomas mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
Wirtz, Ludger mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
Rey, Germain [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit]
Siebentritt, Susanne mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
2019
Journal of Applied Physics
American Institute of Physics
Yes
International
0021-8979
1089-7550
Melville
NY
http://hdl.handle.net/10993/41634
10.1063/1.5095235

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