Excitation-intensity dependence of shallow and deep-level photoluminescence transitions in semiconductors

Reference : Excitation-intensity dependence of shallow and deep-level photoluminescence transitio...


	Document type :	Scientific journals : Article
	Discipline(s) :	Physical, chemical, mathematical & earth Sciences : Physics
	Focus Areas :	Physics and Materials Science
	To cite this reference:	http://hdl.handle.net/10993/41634

Title :	Excitation-intensity dependence of shallow and deep-level photoluminescence transitions in semiconductors
Language :	English
Author, co-author :	Spindler, Conrad [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit]
	Galvani, Thomas [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
	Wirtz, Ludger [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
	Rey, Germain [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit]
	Siebentritt, Susanne [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
Publication date :	2019
Journal title :	Journal of Applied Physics
Publisher :	American Institute of Physics
Peer reviewed :	Yes (verified by ORBi^lu)
Audience :	International
ISSN :	0021-8979
e-ISSN :	1089-7550
City :	Melville
Country :	NY
Permalink :	http://hdl.handle.net/10993/41634
DOI :	10.1063/1.5095235

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Open access	Excitation-intensity-dependence-PL.pdf		Publisher postprint	1.21 MB	View/Open

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