Galvani, T. (2021). Tight-binding perspective on excitons in hexagonal boron nitride [Doctoral thesis, Unilu - University of Luxembourg]. ORBilu-University of Luxembourg. https://orbilu.uni.lu/handle/10993/48521 |
Spindler, C., Galvani, T., Wirtz, L., Rey, G., & Siebentritt, S. (2019). Excitation-intensity dependence of shallow and deep-level photoluminescence transitions in semiconductors. Journal of Applied Physics. doi:10.1063/1.5095235 Peer Reviewed verified by ORBi |
Sponza, L., Amara, H., Attaccalite, C., Latil, S., Galvani, T., Paleari, F., Wirtz, L., & Ducastelle, F. (September 2018). Direct and indirect excitons in boron nitride polymorphs: A story of atomic configuration and electronic correlation. Physical Review. B, Condensed Matter, 98 (12), 125206. doi:10.1103/PhysRevB.98.125206 Peer Reviewed verified by ORBi |
Paleari, F., Galvani, T., Amara, H., Francois, D., Molina-Sanchez, A., & Wirtz, L. (2018). Excitons in few-layer hexagonal boron nitride: Davydov splitting and surface localization. 2D Materials, 5 (4), 045017. doi:10.1088/2053-1583/aad586 Peer Reviewed verified by ORBi |