Article (Scientific journals)
GaInAs Camel Transistors Grown by MOCVD
Marso, Michel; Zwinge, G.; Beneking, H.
1989In Electronics Letters, 25 (1989), p. 1462-1463
Peer reviewed
 

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Disciplines :
Electrical & electronics engineering
Identifiers :
UNILU:UL-ARTICLE-2009-323
Author, co-author :
Marso, Michel ;  Institut für Halbleitertechnik, Sommerfeldstraße, D-5100 Aachen, Germany
Zwinge, G.;  Institut für Halbleitertechnik, Sommerfeldstraße, D-5100 Aachen, Germany
Beneking, H.;  Institut für Halbleitertechnik, Sommerfeldstraße, D-5100 Aachen, Germany
External co-authors :
yes
Language :
English
Title :
GaInAs Camel Transistors Grown by MOCVD
Publication date :
1989
Journal title :
Electronics Letters
ISSN :
0013-5194
Publisher :
Institution of Engineering & Technology
Volume :
25
Issue :
1989
Pages :
1462-1463
Peer reviewed :
Peer reviewed
Available on ORBilu :
since 06 April 2015

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