GaInAs Camel Transistors Grown by MOCVD

Reference : GaInAs Camel Transistors Grown by MOCVD


	Document type :	Scientific journals : Article
	Discipline(s) :	Engineering, computing & technology : Electrical & electronics engineering
	To cite this reference:	http://hdl.handle.net/10993/20764

Title :	GaInAs Camel Transistors Grown by MOCVD
Language :	English
Author, co-author :	Marso, Michel [Institut für Halbleitertechnik, Sommerfeldstraße, D-5100 Aachen, Germany]
	Zwinge, G. [Institut für Halbleitertechnik, Sommerfeldstraße, D-5100 Aachen, Germany]
	Beneking, H. [Institut für Halbleitertechnik, Sommerfeldstraße, D-5100 Aachen, Germany]
Publication date :	1989
Journal title :	Electronics Letters
Publisher :	Institution of Engineering & Technology
Volume :	25
Issue/season :	1989
Pages :	1462-1463
Peer reviewed :	Yes (verified by ORBi^lu)
ISSN :	0013-5194
Permalink :	http://hdl.handle.net/10993/20764

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