Back
  1. Home
  2. Profile of Michel MARSO (Unilu)
Profil

MARSO Michel

Main Referenced Co-authors
Kordoš, P. (113)
Lüth, H. (82)
Fox, A. (51)
Javorka, P. (38)
Wolter, M. (25)
Main Referenced Keywords
GaN (5); HEMT (3); Porous silicon (3); AlGaN (2); Antenna element (2);
Main Referenced Disciplines
Electrical & electronics engineering (192)
Physics (4)
Energy (2)
Materials science & engineering (1)

Publications (total 197)

The most downloaded
1072 downloads
Kobou Ngani, P., Hadji-Minaglou, J.-R., Marso, M., & De Jaeger, E. (2015). Phase-error correction by single-phase phase-locked loops based on transfer delay. Journal of Electrical & Electronic Systems. doi:10.4172/2332-0796.C1.002 https://hdl.handle.net/10993/27344

The most cited

554 citations (Scopus®)

Calarco, R., Marso, M., Richter, T., Aykanat, A. I., Meijers, R., v.d.Hart, A., Stoica, T., & Lüth, H. (2005). Size-dependent Photoconductivity in MBE-Grown GaN-Nanowires. Nano Letters, 5 (5), 981-984. doi:10.1021/nl0500306 https://hdl.handle.net/10993/20218

Mikulics, M., Winden, A., Marso, M., Moonshiram, A., Lüth, H., Grützmacher, D., & Hardtdegen, H. (July 2016). Nano-light-emitting-diodes based on InGaN mesoscopic structures for energy saving optoelectronics. Applied Physics Letters, 109, 041103. doi:10.1063/1.4960007
Peer Reviewed verified by ORBi

Harzheim, T., Heuermann, H., & Marso, M. (2016). An adaptive biasing method for SRD comb generators. In 2016 German Microwave Conference (GeMiC). IEEE. doi:10.1109/GEMIC.2016.7461613

Mikulics, M., Arango, Y. C., Winden, A., Adam, R., Hardtdegen, A., Grützmacher, D., Plinski, E., Gregusova, D., Novak, J., Kordos, P., Moonshiram, A., Marso, M., Sofer, Z., Lüth, H., & Hardtdegen, H. (2016). Direct electro-optical pumping for hybrid CdSe nanocrystal/III-nitride based nano-light-emitting diodes. Applied Physics Letters, 108, 061107. doi:10.1063/1.4941923
Peer Reviewed verified by ORBi

Arend, L., Sperber, R., Marso, M., & Krause, J. (2016). Implementing polarization shift keying over satellite – system design and measurement results. International Journal of Satellite Communications and Networking, 34 (2), 211-229. doi:10.1002/sat.1112
Peer reviewed

Kobou Ngani, P., Hadji-Minaglou, J.-R., Marso, M., & De Jaeger, E. (17 December 2015). A new Single-phase PLL based on the input voltage magnitude estimation [Paper presentation]. International Conference on Electrical Engineering and Computer Sciences, Hong Kong SAR China.

Kobou Ngani, P., Hadji-Minaglou, J.-R., Marso, M., & De Jaeger, E. (2015). Phase-error correction by single-phase phase-locked loops based on transfer delay. Journal of Electrical & Electronic Systems. doi:10.4172/2332-0796.C1.002

Moonshiram, A., & Marso, M. (October 2015). High Gain Patch Antenna for Broadband Applications from 10.1 to 14.2 GHz. NNGT International Journal on Networking and Communication, 4.
Peer reviewed

Moonshiram, A., & Marso, M. (October 2015). Ultra-Broadband Bow-tie Antenna. NNGT International Journal on Networking and Communication, 4.
Peer reviewed

Moonshiram, A., & Marso, M. (October 2015). A Novel Stacked Slotted Bow-Tie Antenna Element at 11.7 GHz. NNGT International Journal on Networking and Communication, 4.
Peer reviewed

Juul, L., Mikulics, M., Marso, M., & Pereira, M. F. (2015). Numerical simulation of high impedance T-match antennas for terahertz photomixers. In Proc. SPIE 9585, Terahertz Emitters, Receivers, and Applications VI, 95850K (August 31, 2015). doi:10.1117/12.2188020

Juul, L., Mikulics, M., Pereira, M. F., & Marso, M. (2015). Numerical study of high impedance T-match antennas for terahertz photomixers. Optical and Quantum Electronics, 47, 913-922. doi:10.1007/s11082-014-0048-3
Peer reviewed

Mikulics, M., Hardtdegen, H., Arango, Y. C., Adam, R., Fox, A., Grützmacher, D., Gregušová, D., Stanček, S., Novák, J., Kordoš, P., Sofer, Z., Juul, L., & Marso, M. (December 2014). Reduction of skin effect losses in double-level-T-gate structure. Applied Physics Letters, 105, 232102. doi:10.1063/1.4903468
Peer Reviewed verified by ORBi

Kobou Ngani, P., Hadji-Minaglou, J.-R., Marso, M., & Dejaeger, E. (2014). Distributed Harmonic Compensation for Power Quality in Smart Grids. Cahier Scientifique - Revue Technique Luxembourgeoise.

Marso, M., Mikulics, M., Winden, A., Arango, Y. C., Schäfer, A., Sofer, Z., Grützmacher, D., & Hardtdegen, H. (2014). InGaN nano-LEDs for energy saving optoelectronics. In Conference Proceedings The 10th International Conference on Advanced Semiconductor devices and Microsystems. doi:10.1109/ASDAM.2014.6998707

Trellenkamp, S., Mikulics, M., Winden, A., Arango, Y. C., Moers, J., Marso, M., Grützmacher, D., & Hardtdegen, H. (2014). III-nitride nano-LEDs for single photon lithography. In Conference Proceedings The 10th International Conference on Advanced Semiconductor devices and Microsystems (pp. 85-88). doi:10.1109/ASDAM.2014.6998652

Fox, A., Mikulics, M., Hardtdegen, H., Trellenkamp, S., Arango, Y. C., Grützmacher, D., Sofer, Z., Gregušová, D., Novák, J., Kordoš, P., & Marso, M. (2014). Novel Double-Level-T-Gate Technology. In Conference Proceedings The 10th International Conference on Advanced Semiconductor devices and Microsystems. doi:10.1109/ASDAM.2014.6998653

Arend, L., Sperber, R., Marso, M., & Krause, J. (2014). Polarization shift keying over satellite - Implementation and demonstration in Ku-band. In Advanced Satellite Multimedia Systems Conference and the 13th Signal Processing for Space Communications Workshop (ASMS/SPSC), 2014 7th (pp. 165-169). doi:10.1109/ASMS-SPSC.2014.6934539
Peer reviewed

Mikulics, M., Hardtdegen, H., Adam, R., Grützmacher, D., Gregušová, D., Novák, J., Kordoš, P., Sofer, Z., Serafini, J., Zhang, J., Sobolewski, R., & Marso, M. (2014). Impact of thermal annealing on nonequilibrium carrier dynamics in single-crystal, freestanding GaAs mesostructures. Semiconductor Science and Technology, 29, 045022. doi:10.1088/0268-1242/29/4/045022
Peer reviewed

Riess, S., Mikulics, M., Winden, A., Adam, R., Marso, M., Detlev Grützmacher, D., & Hardtdegen, H. (2013). Highly Transparent Conducting Polymer Top Contacts for Future III–Nitride Based Single Photon Emitters. Japanese Journal of Applied Physics, 52, 08JH10-1 - 08JH10-4. doi:10.7567/JJAP.52.08JH10
Peer reviewed

Fox, A., Mikulics, M., Winden, A., Hardtdegen, H., Gregusova, D., Adam, R., Sobolewski, R., Marso, M., Grützmacher, D., & Kordos, P. (2012). Towards future III-nitride based THz OEICs in the UV range. In ASDAM 2012, The Ninth International Conference on Advanced Semiconductor Devices and Microsystems (pp. 191 - 194). doi:10.1109/ASDAM.2012.6418570

Trellenkamp, S., Mikulics, M., Winden, A., Adam, R., Moers, J., Marso, M., Grützmacher, D., & Hardtdegen, H. (2012). Tuning the spectral sensitivity of vertical InN nanopyramid based photodetectors by means of band gap engineering and/or nanostructure size control. In ASDAM 2012, The Ninth International Conference on Advanced Semiconductor Devices and Microsystems (pp. 223 - 226). doi:10.1109/ASDAM.2012.6418527

Juul, L., Mikulics, M., & Marso, M. (2012). Improving output power of terahertz heterodyne photomixer by impedance matching. In ASDAM 2012, The Ninth International Conference on Advanced Semiconductor Devices and Microsystems (pp. 75 - 78). doi:10.1109/ASDAM.2012.6418552

Mikulics, M., Fox, A., Marso, M., Grützmacher, D., Donoval, D., & Kordos, P. (2012). Electrical and structural characterization of AlGaN/GaN field-effect transistors with recessed gate. Vacuum, 86 (6), 754 - 756. doi:10.1016/j.vacuum.2011.07.016
Peer Reviewed verified by ORBi

Mikulics, M., Hardtdegen, H., Winden, A., Fox, A., Marso, M., Sofer, Z., Lüth, H., Grützmacher, D., & Kordos, P. (2012). Residual strain in recessed AlGaN/GaN heterostructure field-effect transistors evaluated by micro photoluminescence measurements. Physica Status Solidi C. Current Topics in Solid State Physics, 9 (3-4), 911 - 914. doi:10.1002/pssc.201100408
Peer reviewed

Mikulics, M., Zhang, J., Sobolewski, R., Adam, R., Juul, L., Marso, M., Winden, A., Hardtdegen, H., Grützmacher, D., & Kordos, P. (2012). GaAs nanowhiskers for femtosecond photodetectors and THz emitters. In ASDAM 2012, The Ninth International Conference on Advanced Semiconductor Devices and Microsystems (pp. 71 - 74). doi:10.1109/ASDAM.2012.6418553

Mikulics, M., Hardtdegen, H., Gregušová, D., Sofer, Z., Šimek, P., Trellenkamp, S., Grützmacher, D., Lüth, H., Kordoš, P., & Marso, M. (2012). Non-uniform distribution of induced strain in gate-recessed AlGaN/GaN structure evaluated by micro-PL measurements. Semiconductor Science and Technology, 27 (10), 105008 - 105008. doi:10.1088/0268-1242/27/10/105008
Peer reviewed

Marso, M. (2011). GaN for THz Sources. In Proceedings of SPIE, vol. 7945, pp. 79450Y-1 - 79450Y-9 (pp. 794501 - 794509). SPIE. doi:10.1117/12.872705

Mikulics, M., Kordoš, P., Gregušová, D., Adam, R., Kočan, M., Wu, S., Zhang, J., Sobolewski, R., Grützmacher, D., & Marso, M. (2011). Monolithic Integration of Ultrafast Photodetector and MESFET in the GaN Material System. IEEE Photonics Technology Letters, 23 (17), 1189 - 1191. doi:10.1109/LPT.2011.2157816
Peer Reviewed verified by ORBi

Lüth, H., Blömers, C., Richter, T., Wensorra, J., Estevez Hernandez, S., Petersen, G., Lepsa, M., Schäpers, T., Marso, M., Indlekofer, M., Calarco, R., Demarina, N., & Grützmacher, D. (2010). Quantum transport in narrow-gap semiconductor nanocolumns. Physica Status Solidi C. Current Topics in Solid State Physics, 7 (2), 386 - 389. doi:10.1002/pssc.200982506
Peer reviewed

Fox, A., Mikulics, M., Strang, B., Marso, M., Grützmacher, D., & Kordos, P. (2010). Comparison of AlGaN/GaN HFETs and MOSHFETs in prospect of oscillator design. In The Eighth International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010 (pp. 159 - 162). doi:10.1109/ASDAM.2010.5666328

Marso, M. (2010). GaN for THz Sources. In Proceedings of the Eighth International Conference on Advanced Semiconductor Devices and Microsystems ASDAM 2010 (pp. 147-154). doi:10.1109/ASDAM.2010.5666326

Mikulics, M., Adam, R., Sofer, Z., Hardtdegen, H., Stanček, S., Knobbe, J., Kočan, M., Stejskal, J., Sedmidubský, D., Pavlovič, M., Nečas, V., Grützmacher, D., & Marso, M. (2010). Femtosecond and highly sensitive GaAs metal–semiconductor–metal photodetectors grown on aluminum mirrors/pseudo-substrates. Semiconductor Science and Technology, 25 (7), 75001. doi:10.1088/0268-1242/25/7/075001
Peer reviewed

Marso, M. (2009). Das Spektrum der elektromagnetischen Strahlung: Technische Nutzung und Herausforderungen. Revue Technique Luxembourgeoise, (4), 36-37.

Kleine-Ostmann, T., Pierz, K., Hein, G., Dawson, P., Marso, M., & Koch, M. (2009). Spatially resolved measurements of depletion properties of large gate two-dimensional electron gas semiconductor terahertz modulators. Journal of Applied Physics, 105 (9), 093707-1-093707-6. doi:10.1063/1.3122595
Peer reviewed

Guarino, G., Donaldson, W. R., Mikulics, M., Marso, M., Kordos, P., & Sobolewski, R. (2009). Finite element simulation of metal-semiconductor-metal photodetector. Solid-State Electronics, 53 (10), 1144-1148. doi:10.1016/j.sse.2009.07.001
Peer Reviewed verified by ORBi

Mikulics, M., Marso, M., Lepsa, M., Grützmacher, D., & Kordos, P. (2009). Output Power Improvement in MSM Photomixers by Modified Finger Contacts Configuration. IEEE Photonics Technology Letters, 21 (3), 146-148. doi:10.1109/LPT.2008.2008202
Peer Reviewed verified by ORBi

Mikulics, M., Marso, M., Wu, S., Fox, A., Lepsa, M., Grützmacher, D., Sobolewski, R., & Kordoš, P. (15 June 2008). Sensitivity enhancement of metal-semiconductor-metal photodetectors on low-temperature-grown GaAs using alloyed contacts. IEEE Photonics Technology Letters, 20 (12), 1054-1056. doi:10.1109/LPT.2008.924184
Peer Reviewed verified by ORBi

Polenta, L., Rossi, M., Cavallini, A., Calarco, R., Marso, M., Meijers, R., Richter, T., Stoica, T., & Lüth, H. (2008). Investigation on Localized States in GaN Nanowires. ACS Nano, 2, 287-292. doi:10.1021/nn700386w
Peer Reviewed verified by ORBi

Richter, T., Lüth, H., Meijers, R., Calarco, R., & Marso, M. (2008). Doping Concentration of GaN Nanowires Determined by Opto-Electrical Measurements. Nano Letters, 8 (9), 3056-3059. doi:10.1021/nl8014395
Peer Reviewed verified by ORBi

Blömers, C., Schäpers, T., Richter, T., Calarco, R., Lüth, H., & Marso, M. (2008). Temperature-dependence of the phase-coherence length in InN nanowires. Applied Physics Letters, 92 (13), 132101-132103. doi:10.1063/1.2905268
Peer reviewed

Ebbecke, J., Maisch, S., Wixforth, A., Calarco, R., Meijers, R., Marso, M., & Lüth, H. (2008). Acoustic charge transport in GaN nanowires. Nanotechnology, 19 (27), 275708-5. doi:10.1088/0957-4484/19/27/275708
Peer Reviewed verified by ORBi

Blömers, C., Schäpers, T., Richter, T., Calarco, R., Lüth, H., & Marso, M. (2008). Phase-coherent transport in InN nanowires of various sizes. Physical Review, B 77 (20). doi:10.1103/PhysRevB.77.201301
Peer reviewed

Kordoš, P., Marso, M., & Mikulics, M. (2007). Performance optimization of GaAs-based photomixers as sources of THz radiation. Applied Physics A : Materials Science & Processing, 87 (3), 563-567. doi:10.1007/s00339-007-3909-9
Peer reviewed

Hardtdegen, H., Steins, R., Kaluza, N., Cho, Y. S., Wirtz, K., von der Ahe, M., Bay, H. L., Heidelberger, G., & Marso, M. (2007). New approaches for growth control of GaN-based HEMT structure. Applied Physics A : Materials Science & Processing, 87 (3), 491-498. doi:10.1007/s00339-007-3933-9
Peer reviewed

Calarco, R., & Marso, M. (2007). GaN and InN nanowires grown by MBE: A comparison. Applied Physics A : Materials Science & Processing, 499-503. doi:10.1007/s00339-007-3871-6
Peer reviewed

Gregušová, D., Stoklas, R., Čičo, K., Heidelberger, G., Marso, M., Kordoš, P., & Novák, J. (2007). Characterization of AlGaN/GaN MOSHFETs with Al2O3 as Gate Oxide. Physica Status Solidi C. Current Topics in Solid State Physics, 4 (2007), 2720-2723. doi:10.1002/pssc.200674828
Peer reviewed

Marso, M., Heidelberger, G., Indlekofer, K. M., Bernát, J., Fox, A., Kordoš, P., & Lüth, H. (2006). Origin of Improved RF Performance of AlGaN/GaN MOSHFETs Compared to HFETs. IEEE Transactions on Electron Devices, 53 (7), 1517-1723. doi:10.1109/TED.2006.875819
Peer Reviewed verified by ORBi

Cámara Mayorga, I., Muñoz Pradas, P., Michael, E. A., Mikulics, M., Schmitz, A., van der Wal, P., Kaseman, C., Güsten, R., Jacobs, K., Marso, M., Lüth, H., & Kordoš, P. (2006). Terahertz photonic mixers as local oscillators for hot electron bolometer and superconductor-insulator-superconductor astronomical receivers. Journal of Applied Physics, 100, 043116. doi:10.1063/1.2336486
Peer reviewed

Meijers, R., Richter, T., Calarco, R., Stoica, T., Bochem, H.-P., Marso, M., & Lüth, H. (2006). GaN-nanowhiskers: MBE-growth conditions and optical properties. Journal of Crystal Growth, 289 (1), 381-386. doi:10.1016/j.jcrysgro.2005.11.117
Peer Reviewed verified by ORBi

Heidelberger, G., Bernát, J., Gregušová, D., Fox, A., Marso, M., Lüth, H., & Kordoš, P. (2006). Comparative study on unpassivated and passivated AlGaN/GaN HFETs and MOSHFETs. Physica Status Solidi A. Applications and Materials Science, 203 (7), 1876-1881. doi:10.1002/pssa.200565249
Peer Reviewed verified by ORBi

Marso, M., Fox, A., Heidelberger, G., Kordoš, P., & Lüth, H. (2006). Comparison of AlGaN/GaN MSM Varactor Diodes Based on HFET and MOSHFET Layer Structures. IEEE Electron Device Letters, 27, 945-947. doi:10.1109/LED.2006.886705
Peer reviewed

Marso, M., Fox, A., Heidelberger, G., Bernát, J., & Lüth, H. (2006). An AlGaN/GaN two-color photodetector based on AlGaN/GaN/SiC HEMT layer structure. Physica Status Solidi C. Current Topics in Solid State Physics, 3 (6), 2261-2264. doi:10.1002/pssc.200565127
Peer reviewed

Mikulics, M., Marso, M., Mantl, S., Lüth, H., & Kordoš, P. (2006). GaAs photodetectors prepared by high-energy and high-dose nitrogen implantation. Applied Physics Letters, 89. doi:10.1063/1.2339907
Peer reviewed

Fox, A., Marso, M., Heidelberger, G., & Kordoš, P. (2006). RF characterization and modeling of AlGaN/GaN based HFETs and MOSHFETs. In Proc. 6th Intern. Conf. Advanced Semicon. Dev. & Microsystems ASDAM’06 (2006).

Marso, M., Fox, A., Heidelberger, G., Kordos, P., & Lüth, H. (2006). Comparison of AlGaN/GaN MSM varactor diodes based on HFET and MOSHFET layer structures. In Proc. 6th Intern. Conf. Advanced Semicon. Dev. & Microsystems ASDAM’06.

Mikulics, M., Wu, S., Marso, M., Adam, R., Förster, A., van der Hart, A., Kordoš, P., Lüth, H., & Sobolewski, R. (2006). Ultrafast and Highly-Sensitive Photodetectors with Recessed Electrodes Fabricated on Low-Temperature-Grown GaAs. IEEE Photonics Technology Letters, 18 (2006) (5-6), 820-822. doi:10.1109/LPT.2006.871696
Peer Reviewed verified by ORBi

Mikulics, M., Michael, E. A., Marso, M., Lepsa, M., van der Hart, A., Lüth, H., Dewald, A., Stanček, S., Mozolik, M., & Kordoš, P. (2006). Traveling-wave photomixers fabricated on high energy nitrogen-ion-implanted GaAs. Applied Physics Letters, 89 (7), 071103. doi:10.1063/1.2337523
Peer reviewed

Mikulics, M., Michael, E. A., Schieder, R., Stutzki, J., Güsten, R., Marso, M., van der Hart, A., Bochem, H. P., Lüth, H., & Kordoš, P. (2006). Traveling-wave photomixer with recessed interdigitated contacts on low-temperature-grown GaAs. Applied Physics Letters, 88 (4), 041118.1-041118.3. doi:10.1063/1.2168250
Peer reviewed

Cavallini, A., Polenta, L., Rossi, M., Richter, T., Marso, M., Meijers, R., Calarco, R., & Lüth, H. (2006). Defect Distribution along Single GaN Nanowhiskers. Nano Letters, 6 (7), 1548-1551. doi:10.1021/nl060332n
Peer Reviewed verified by ORBi

Heidelberger, G., Roeckerath, M., Steins, R., Stefaniak, M., Fox, A., Schubert, J., Kaluza, N., Marso, M., Lüth, H., & Kordoš, P. (2006). Technology related issues regarding fabrication of AlGaN/GaN-based MOSHFETs with GdScO3 as dielectric. Proceedings of 6th Intern. Conf. Advanced Semicon. Dev. & Microsystems ASDAM’06, 241-244.

Mikulics, M., Marso, M., Stanček, S., Michael, E. A., & Kordoš, P. (2006). Terahertz-Radiation Photomixers on Nitrogen-Implanted GaAs, (2006) 117 - 120. Proceedings of 6th Intern. Conf. Advanced Semicon. Dev. & Microsystems ASDAM’06.

Kordoš, P., Bernát, J., Gregušová, D., Marso, M., & Lüth, H. (2006). Impact of surface treatment under the gate on the current collapse of unpassivated AlGaN/GaN heterostructure field-effect transistors. Semiconductor Science and Technology, 21 (2006), 67-71. doi:10.1088/0268-1242/21/1/012
Peer reviewed

Kordoš, P., Heidelberger, G., Bernát, J., Fox, A., Marso, M., & Lüth, H. (2005). High-power SiO2/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors. Applied Physics Letters, 87 (14), 143501-143504. doi:10.1063/1.2058206
Peer reviewed

Bernát, J., Gregusová, D., Heidelberger, G., Fox, A., Marso, M., Lüth, H., & Kordoš, P. (2005). SiO2 /AlGaN/GaN MOSHFET with 0.7 µm gate-length and fmax / fT of 40/24 GHz. Electronics Letters, 41 (11), 667-668. doi:10.1049/el:20050556
Peer reviewed

Mikulics, M., Marso, M., Cámara Mayorga, I., Güsten, R., Stanček, S., Kováč, P., Wu, S., Khafizov, M., Sobolewski, R., Michael, E. A., Schieder, R., Wolter, M., Buca, D., Förster, A., Kordoš, P., Lüth, H., & Li, X. (2005). Photomixers fabricated on nitrogen-ion-implanted GaAs. Applied Physics Letters, 87 (4), 41106-1-3. doi:10.1063/1.2006983
Peer reviewed

Michael, E. A., Vowinkel, B., Schieder, R., Mikulics, M., Marso, M., & Kordoš, P. (2005). Large-area traveling-wave photonic mixers for increased continuous terahertz power. Applied Physics Letters, 86 (11), 111120-111123. doi:10.1063/1.1884262
Peer reviewed

Mikulics, M., Kočan, M., Rizzi, A., Javorka, P., Sofer, Z., Stejskal, J., Marso, M., Kordoš, P., & Lüth, H. (2005). Growth and properties of GaN and AlN layers on silver substrates. Applied Physics Letters, 87, 212109. doi:10.1063/1.2135879
Peer reviewed

Bernát, J., Pierobon, R., Marso, M., Flynn, J., Brandes, G., Meneghesso, G., Zanoni, E., & Kordoš, P. (2005). Low Current Dispersion and Low Bias-stress Degradation of Unpassivated GaN/AlGaN/GaN/SiC HEMTs. Physica Status Solidi C. Current Topics in Solid State Physics, 2 (7), 2676-2679. doi:10.1002/pssc.200461304
Peer reviewed

Mikulics, M., Marso, M., Javorka, P., Kordoš, P., Lüth, H., Kočan, M., Rizzi, A., Wu, S., & Sobolewski, R. (2005). Ultrafast metal-semiconductor-metal photodetectors on low-temperature-grown GaN. Applied Physics Letters, 86 (21), 211110. doi:10.1063/1.1938004
Peer reviewed

Bohn, H. G., & Marso, M. (2005). Wedge-shaped layers from porous silicon: the basics of laterally graded interference filters. Physica Status Solidi A. Applied Research, 202 (8), 1437-1442. doi:10.1002/pssa.200461126
Peer Reviewed verified by ORBi

Mikulics, M., Adam, R., Marso, M., Forster, A., Kordos, P., Luth, H., Wu, S., Zheng, X., & Sobolewski, R. (2005). Ultrafast Low-Temperature-Grown Epitaxial GaAs Photodetectors Transferred on Flexible Plastic Substrates. IEEE Photonics Technology Letters, 17 (8), 1725-1727. doi:10.1109/LPT.2005.851025
Peer Reviewed verified by ORBi

Marso, M., Mikulics, M., Adam, R., Wu, S., Zheng, X., Camara, I., Siebel, F., Förster, A., Güsten, R., Kordoš, P., & Sobolewski, R. (2005). Ultrafast Phenomena in Freestanding LT-GaAs Devices. Acta Physica Polonica A, VOL 107; PART 1, 109-117. doi:10.12693/aphyspola.107.109
Peer Reviewed verified by ORBi

Marso, M., Bernát, J., Javorka, P., Fox, A., & Kordoš, P. (2005). Influence of carrier supply doping on the RF properties of AlGaN/GaN/SiC high-electron-mobility transistors. Physica Status Solidi C. Current Topics in Solid State Physics, 2 (7), 2611-2614. doi:10.1002/pssc.200461325
Peer reviewed

Gregusova, D., Bernát, J., Drzik, M., Marso, M., Novak, J., Kordoš, P., & Uherek, F. (2005). Influence of passivation-induced stress on the performance of AlGaN/GaN HEMTs. Physica Status Solidi C. Current Topics in Solid State Physics, 2 (7), 2619-2622. doi:10.1002/pssc.200461350
Peer reviewed

Calarco, R., Marso, M., Richter, T., Aykanat, A. I., Meijers, R., v.d.Hart, A., Stoica, T., & Lüth, H. (2005). Size-dependent Photoconductivity in MBE-Grown GaN-Nanowires. Nano Letters, 5 (5), 981-984. doi:10.1021/nl0500306
Peer Reviewed verified by ORBi

Marso, M., Bernát, J., Javorka, P., & Kordoš, P. (2004). Influence of a carrier supply layer on carrier density and drift mobility of AlGaN/GaN/SiC high-electron-mobility transistors. Applied Physics Letters, 84 (2004), 2928. doi:10.1063/1.1704854
Peer reviewed

Bernát, J., Javorka, P., Fox, A., Marso, M., & Kordoš, P. (2004). Influence of layer structure on performance of AlGaN/GaN High Electron Mobility Transistors before and after passivation. Journal of Electronic Materials, 33 ((2004)), 436-439. doi:10.1007/s11664-004-0198-3
Peer reviewed

Mikulics, M., Wolter, M. J., Marso, M., Camara, I., Stanček, S., Wu, S., Buca, D., Sobolewski, R., Kováč, P., Güsten, R., Lüth, H., & Kordoš, P. (2004). Nitrogen implanted GaAs for ultrafast photodetectors and photomixers. In Proc. 5th Intern. Conf. Advanced Semicon. Dev. & Microsystems ASDAM’04 (pp. 53-56).

Bernát, J., Marso, M., Fox, A., Kordoš, P., & Lüth, H. (2004). DC and Pulsed Behaviour of Undoped and Doped AlGaN/GaN/SiC HEMTs before and after Si3N4 passivation. In Proc. 5th Intern. Conf. Advanced Semicon. Dev. & Microsystems ASDAM’04 (pp. 139-142).

Bernát, J., Wolter, M., Fox, A., Marso, M., Flynn, J., Brandes, G., & Kordoš, P. (2004). Impact of layer structure on performance of unpassivated AlGaN/GaN/SiC HEMTs. Electronics Letters, 40 (1), 78-80. doi:10.1049/el:20040021
Peer reviewed

Adam, R., Mikulics, M., Wu, S., Zheng, X., Marso, M., Camara, I., Siebel, F., Güsten, R., Förster, A., Kordoš, P., & Sobolewski, R. (2004). Fabrication and performance of hybrid photoconductive devices based on freestanding LT-GaAs, Ultrafast Phenomena in Semiconductors and Nanostructure Materials VIII. Proceedings of SPIE, 5353 (2004), 321-332.

Bernát, J., Wolter, M., Javorka, P., Fox, A., Marso, M., & Kordoš, P. (2004). Performance of unpassivated AlGaN/GaN/SiC HEMTs after short-term electrical bias stress. Solid-State Electronics, 48 ((2004)), 1825-1828. doi:10.1016/j.sse.2004.05.020
Peer Reviewed verified by ORBi

Marso, M., Wolter, M., & Kordoš, P. (2004). A novel two-color photodetector based on an InAlAs-InGaAs HEMT layer structure. IEEE Photonics Technology Letters, 16 (2004) (11), 2541-2543. doi:10.1109/LPT.2004.834909
Peer Reviewed verified by ORBi

Calarco, R., Marso, M., Meijers, R., Richter, T., Aykanat, A. I., Stoica, T., & Lüth, H. (2004). GaN Nanocolumns on Si(111) Grown b Molecular Beam Epitaxy. In Proc. 5th Intern. Conf. Advanced Semicon. Dev. & Microsystems ASDAM’04 (pp. 9-12).

Marso, M., Bernát, J., Javorka, P., Fox, A., Wolter, M., & Kordoš, P. (2004). MSM varactor diodes based on AlGaN/GaN/SiC HEMT layer structures. In Proc. 5th Intern. Conf. Advanced Semicon. Dev. & Microsystems ASDAM’04 (pp. 151-154).

Fox, A., Marso, M., Bernát, J., Javorka, P., & Kordoš, P. (2004). Influence of doping density on small and large signal characteristics of AlGaN/GaN/SiC HEMTs. In Proc. 5th Intern. Conf. Advanced Semicon. Dev. & Microsystems ASDAM’04 (pp. 147-150).

Mikulics, M., Camara, I., Marso, M., van der Hart, A., Fox, A., Förster, A., Güsten, R., Lüth, H., & Kordoš, P. (2004). Generation of 1 THz radiation by photomixing in low-temperature-grown MBE GaAs. In Proc. 5th Intern. Conf. Advanced Semicon. Dev. & Microsystems ASDAM’04 (pp. 231 – 234).

Moers, J., Trellenkamp, S., Marso, M., v.d.Hart, A., Mantl, S., Lüth, H., & Kordoš, P. (2004). Vertical Double-Gate MOSFETs. In Proc. 5th Intern. Conf. Advanced Semicon. Dev. & Microsystems ASDAM’04 (pp. 215-218).

Mayorga, I. C., Mikulics, M., Schmitz, A., Van der Wal, P., Guesten, R., Marso, M., Kordoš, P., & Lüth, H. (2004). An optimization of terahertz local oscillators based on LT-GaAs technology. SPIE, 5498 (2004), 537. doi:10.1117/12.551754

Michael, E. A., Mikulics, M., Marso, M., Kordos, P., Luth, H., Vowinkel, B., Schieder, R., & Stutzki, J. (2004). Large-area traveling-wave LT-GaAs photomixers for LO application. SPIE, 5498 (2004), 525. doi:10.1117/12.551633

Bernát, J., Javorka, P., Fox, A., Marso, M., Lüth, H., & Kordoš, P. (2003). Effect of surface passivation on performance of AlGaN/GaN/Si HEMTs. Solid-State Electronics, 47 ((2003)), 2097-2103. doi:10.1016/S0038-1101(03)00238-7
Peer Reviewed verified by ORBi

Mikulics, M., Marso, M., Kordoš, P., Stancek, Kovác, Zheng, X., Wu, S., & Sobolewski, R. (2003). Ultrafast and highly sensitive photodetectors fabricated on high-energy nitrogen-implanted GaAs. Applied Physics Letters, 83, 1719-1721. doi:10.1063/1.1606879
Peer reviewed

Bernat, J., Javorka, P., Marso, M., & Kordos, P. (2003). Conductivity and Hall effect measurements on intentionally undoped and doped AlGaN/GaN heterostructures before and after passivation. Applied Physics Letters, 83 ((2003)), 5455. doi:10.1063/1.1637154
Peer reviewed

Javorka, P., Alam, A., Marso, M., Wolter, M., Kuzmík, J., Fox, A., Heuken, M., & Kordoš, P. (2003). Material and Device Issues of AlGaN/GaN HEMTs on Silicon Substrates. Microelectronics Journal, 34, 435-437. doi:10.1016/S0026-2692(03)00067-3
Peer Reviewed verified by ORBi

Javorka, P., Alam, A., Marso, M., Wolter, M., Fox, A., Heuken, M., & Kordos, P. (2003). Material and Device Issues of AlGaN/GaN HEMTs on Silicon Substrates. In Proceedings of the MRS Fall Meeting, Boston 2002.

Marso, M., Javorka, P., Dikme, Y., Kalisch, H., Bernát, J., Schäfer, C., Schineller, B., v.d.Hart, A., Wolter, M., Fox, A., H.Jansen, R., Heuken, M., Kordoš, P., & Lüth, H. (2003). Influence of doping concentration on DC and RF performance of AlGaN/GaN HEMTs on silicon substrate. Physica Status Solidi A. Applications and Materials Science, (1), 179-182. doi:10.1002/pssa.200303457
Peer Reviewed verified by ORBi

Wolter, M., Marso, M., P.Javorka, J., Bernát, J., Carius, R., Lüth, H., & Kordoš, P. (2003). Investigation of traps in AlGaN/GaN HEMTs on silicon substrate. Physica Status Solidi C. Current Topics in Solid State Physics, (7), 2360-2363. doi:10.1002/pssc.200303535
Peer reviewed

Marso, M., Wolter, M., Javorka, P., Kordos, P., & Lüth, H. (2003). Investigation of buffer traps in an AlGaN/GaN/Si high electron mobility transistor by backgating current deep level transient spectroscopy. Applied Physics Letters, 82. doi:10.1063/1.1540239
Peer reviewed

Javorka, P., Bernát, J., Fox, A., Marso, M., Luth, H., & Kordoš-, P. (2003). Influence of SiO/sub 2/ and Si/sub 3/N/sub 4/ passivation on AlGaN/GaN/Si HEMT performance. Electronics Letters, 39 ((2003)), 1155-1157. doi:10.1049/el:20030748
Peer reviewed

Kuzmik, J., Blaho, M., Pogany, D., Gornik, E., Alam, A., Dikme, Y., Heuken, M., Javorka, P., Marso, M., & Kordoš, P. (2003). Backgating high-current and breakdown characterisation of AlGaN/GaN HEMTs on silicon substrates. Proceedings of the ESSDERC 2003. Estoril, Portugal, 319-322. doi:10.1109/ESSDERC.2003.1256878

Vitusevich, S. A., Petrychuk, M. V., Klein, N., Danylyuk, S. V., Javorka, P., Marso, M., Kordoš, P., Lüth, H., & Belyaev, A. E. (2003). Peculiarities of low frequency noise in GaN-based high electron mobility transistors. Proceedings of 17th Internat. Conf. Noise and Fluctuations ICNF, 789-793. doi:10.1063/1.1463202

Jäger, N. D., Marso, M., Salmeron, M., Weber, E. R., Urban, K., & Ebert, P. (2003). Physics of imaging p-n junctions by scanning tunneling microscopy and spectroscopy. Physical Review. B, Condensed Matter, ((2003)), 165307. doi:10.1103/PhysRevB.67.165307
Peer reviewed

Goryll, M., Moers, J., Trellenkamp, S., Vescan, L., Marso, M., Kordos, P., & Luth, H. (2003). Wet low-temperature gate oxidation for nanoscale vertical field-effect transistors. Physica E: Low-Dimensional Systems and Nanostructures, 19 (2003), 18-22. doi:10.1016/S1386-9477(03)00287-X
Peer reviewed

Mikulics, M., Siebel, F., Zheng, X., Adam, R., Marso, M., Stüer, H., Sobolewski, R., Güsten, R., & Kordoš, P. (2002). Freestanding LT GaAs as a subpicosecond photoconductive switch and high-voltage photomixer. Abstract book of 4th Symposium on Non-Stoichiometric III-V Compounds, Physik Mikrostrukturierter Halbleiter 27, 43-48.

Marso, M., Wolter, M., Javorka, P., Alam, A., Fox, A., Heuken, M., Kordoš, P., & Lüth, H. (2002). Investigation of AlGaN/GaN HEMTs on Si substrate using backgating. Physica Status Solidi C. Current Topics in Solid State Physics, (1), 65-68. doi:10.1002/pssc.200390118
Peer reviewed

Mistele, D., Rotter, T., Bougrioua, Z., Marso, M., Roll, H., Klausing, H., Fedler, F., Semchinova, O. K., Aderhold, J., Moermann, I., & Graul, J. (2002). Influence of Surface Treatments on DC-Performance of GaN-Based HFETs. Physica Status Solidi A. Applications and Materials Science, 194 (2), 452-455.
Peer Reviewed verified by ORBi

Wolter, M., Javorka, P., Marso, M., Fox, A., Carius, R., Alam, A., Heuken, H., Lüth, H., & Kordoš, P. (2002). Photoionization spectroscopy of traps in AlGaN/GaN HEMTs. Journal of Electronic Materials, 31 (12), 1321-1324.
Peer reviewed

Kuzmík, J., Javorka, P., Alam, A., Marso, M., Heuken, M., & Kordoš, P. (2002). Determination of channel temperature in AlGaN/GaN HEMTs grown on sapphire and silicon substrates using DC characterization method. IEEE Transactions on Electron Devices, 49 (8), 1496-1498. doi:10.1109/TED.2002.801430
Peer Reviewed verified by ORBi

Javorka, P., Alam, A., Marso, M., Wolter, M., Fox, A., Heuken, M., & Kordoš, P. (2002). Fabrication and performance of AlGaN/GaN HEMTs on (111) Si substrates. Physica Status Solidi A. Applications and Materials Science, 194 (2), 472-475. doi:10.1002/1521-396X(200212)194:2<472::AID-PSSA472>3.0.CO;2-F
Peer Reviewed verified by ORBi

Wolter, M., Javorka, P., Marso, M., Fox, A., Carius, R., Alam, A., Heuken, M., Kordoš, P., & Lüth, H. (2002). Photoionization spectroscopy of traps in doped and undoped AlGaN/GaN HEMTs. Physica Status Solidi C. Current Topics in Solid State Physics, (1), 82-85.
Peer reviewed

Marso, M., Bernát, J., Wolter, M., Javorka, P., Fox, A., & Kordoš, P. (2002). MSM Diodes Based on an AlGaN/GaN HEMT Layer Structure for Varactor and Photodiode Application. In Proc. 4th Intern. Conf. Advanced Semicon. Dev. & Microsystems (pp. 295-298).

Wolter, M., Javorka, P., Marso, M., Carius, R., Heuken, H., Lüth, H., & Kordoš, P. (2002). Investigation of current collapse in doped and undoped AlGaN/GaN HEMTs. In Proc. 4th Intern. Conf. Advanced Semicon. Dev. & Microsystems (pp. 299-302 (2002).

Javorka, P., Alam, A., Fox, A., Marso, M., Heuken, M., & Kordoš, P. (2002). High-performance AlGaN/GaN HEMTs on silicon substrates. In Proc. 4th Intern. Conf. Advanced Semicon. Dev. & Microsystems (pp. 287-290 (2002).

Mikulics, M., Siebel, F., Fox, A., Marso, M., Förster, A., Stüer, H., Schäfer, F., Güsten, R., & Kordoš, P. (2002). Generation of 460 GHz radiation by photomixing in low-temperature-grown MBE GaAs. In Proc. 4th Intern. Conf. Advanced Semicon. Dev. & Microsystems (pp. 129-132 (2002).

Goryll, M., Moers, J., Trellenkamp, S., Vescan, L., Marso, M., Kordoš, P., & Lüth, H. (2002). Thin low-temperature gate oxides for vertical field-effect transistor. In Proc. 4th Intern. Conf. Advanced Semicon. Dev. & Microsystems (pp. 275-277).

Fox, A., Marso, M., Javorka, P., & Kordoš, P. (2002). RF small-signal and power characterization of AlGaN/GaN HEMTs. In Proc. 4th Intern. Conf. Advanced Semicon. Dev. & Microsystems (pp. 291-294 (2002).

Kalisch, H., Dikme, Y., Gerstenbrandt, G., Alam, A., Szymakowski, A., Klockenhoff, H., Rieckmann, C., Heuken, M., H.Jansen, R., Javorka, P., Marso, M., Fox, A., Kordoš, P., & Lüth, H. (2002). Growth and characterisation of AlGaN/GaN-HEMTs on silicon substrates. Physica Status Solidi A. Applications and Materials Science, 194 (2), 464-467.
Peer Reviewed verified by ORBi

Javorka, P., Alam, A., Fox, A., Marso, M., Heuken, M., & Kordoš, P. (2002). AlGaN/GaN HEMTs on Silicon Substrates with f¬T of 32/20 GHz and fmax of 27/22 GHz for 0.5/0.7 µm gate length. Electronics Letters, 38 (2002), 288-289. doi:10.1049/el:20020203
Peer reviewed

Javorka, P., Alam, A., Wolter, M., Fox, A., Marso, M., Heuken, M., Lüth, H., & Kordoš, P. (2002). AlGaN/GaN HEMTs on (111) Silicon Substrates. IEEE Electron Device Letters, 23 (2002), 4-6. doi:10.1109/55.974794
Peer reviewed

Javorka, P., Alam, A., Marso, M., Wolter, M., Fox, A., Heuken, M., & Kordoš, P. (2002). Material and Device Issues of AlGaN/GaN HEMTs on Silicon Substrates. Materials Research Society Symposia Proceedings, 743, L9.1.1. doi:10.1557/proc-743-l9.1

Kuzmík, J., Javorka, P., Marso, M., & Kordoš. (2002). Annealing of Schottky contacts deposited on dry etched AlGaN/GaN. Semiconductor Science and Technology, 17 ((2002).), 76-L78. doi:10.1088/0268-1242/17/11/103
Peer reviewed

Wolter, M., Javorka, P., Marso, M., Alam, A., Carius, R., Fox, A., Heuken, M., Lüth, H., & Kordoš, P. (2001). Investigations on the influence of traps in AlGaN/GaN HEMTs. EDMO.

Marso, M., Javorka, P., Alam, A., Wolter, M., Hardtdegen, H., Fox, A., Heuken, M., Kordoš, P., & Lüth, H. (2001). AlGaN/GaN HEMT Optimization Using the RoundHEMT Technology. Physica Status Solidi A. Applied Research, 188, 199-202. doi:10.1002/1521-396X(200111)188:1<199::AID-PSSA199>3.0.CO;2-U
Peer Reviewed verified by ORBi

Marso, M., Wolter, M., Bernát, J., Javorka, P., Fox, A., & Kordoš, P. (2001). Varactor Diodes based on an AlGaN/GaN HEMT layer structure. EProc. EDMO.

Moers, J., Trellenkamp, S., Vescan, L., Marso, M., Kordoš, P., & Lüth, H. (2001). Vertical Double-Gate MOSFET Based on Epitaxial Growth. Proceedings of the 31st European Solid State Devices Research Conference, Nürnberg, Germany, 191-194.

Mikulics, M., Marso, M., Fox, A., Buca, D., Förster, A., & Kordoš, P. (2001). Low-temperature-grown MBE GaAs for terahertz photomixers. EDMO.

Marso, M., Wolter, M., Arens-Fischer, R., & Lüth, H. (2001). Fabrication of Laterally Displaced Porous Silicon Filters. Thin Solid Films, 382 (2001), 218-221. doi:10.1016/S0040-6090(00)01762-4
Peer Reviewed verified by ORBi

Marso, M., Wolter, M., Javorka, P., Fox, A., & Kordoš, P. (2001). AlGaN/GaN Varactor Diode for Integration in HEMT Circuits. Electronics Letters, 37 (2001), 1476-1478. doi:10.1049/el:20011007
Peer reviewed

Javorka, P., Alam, A., Nastase, N., Marso, M., Hardtdegen, H., Heuken, M., Lüth, H., & Kordoš, P. (2001). AlGaN/GaN Round-HEMTs on (111) silicon substrates. Electronics Letters, 37 (2001), 1364-1366. doi:10.1049/el:20010926
Peer reviewed

Kuzmík, J., Javorka, P., Alam, A., Marso, M., Heuken, M., & Kordoš, P. (2001). Investigation of self-heating effects in AlGaN/GaN HEMTs. Proceedings of EDMO.

Javorka, P., Wolter, M., Alam, A., Fox, A., Marso, M., Heuken, M., & Kordoš, P. (2001). Optimization of AlGaN/GaN HEMT performance. Proceedings of EDMO.

Arens-Fischer, R., Krüger, M., Thönissen, M., Ganse, V., Hunkel, D., Marso, M., & Lüth, H. (2000). Formation of Porous Silicon Filter Structures with Different Properties on Small Areas. Journal of Porous Materials, 7 (1/2/3), 223-226. doi:10.1023/a:1009651224071
Peer Reviewed verified by ORBi

Kordoš, P., Alam, A., Betko, J., Chow, P. P., Heuken, M., Javorka, P., Kočan, M., Marso, M., Morvic, M., & van Hove, J. M. (2000). Material and Device Issues of GaN-based HEMTs. In Proceedings of the 8th International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (EDMO) (pp. 61-66). doi:10.1109/EDMO.2000.919030

Thönissen, M., Marso, M., Arens-Fischer, R., Hunkel, D., Krüger, M., Ganse, V., Lüth, H., & Theiss, W. (2000). Electrical Control of the Reflectance of Porous Silicon Layers. Journal of Porous Materials, 7 ((1/2/3),), 205-208. doi:10.1023/a:1009642922253
Peer Reviewed verified by ORBi

Marso, M., Wolter, M., Arens-Fischer, R., Kordos, P., & Lüth, H. (2000). Formation of laterally displaced porous silicon filters using different fabrication methods. In Proceedings of the 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems. doi:10.1109/ASDAM.2000.889458

Moers, J., Tönnesmann, A., Klaes, D., Vescan, L., v.d.Hart, A., Fox, A., Marso, M., Kordoš, P., & Lüth, H. (2000). Vertical Silicon MOSFETs based on Selective Epitaxial Growth. In Proc. 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems (pp. 67). doi:10.1109/ASDAM.2000.889454

Hunkel, D., Marso, M., Butz, R., Arens-Fischer, R., & Lüth, H. (2000). Integrated photometer with porous silicon interference filters. Materials Science and Engineering: A: Structural Materials: Properties, Microstructures and Processing, B69-70 ((2000)), 100-103. doi:10.1016/S0921-5107(99)00404-3
Peer reviewed

Hodel, U., Orzati, A., Marso, M., Homan, O., Fox, A., Hart, A. V. D., Förster, A., Kordoš, P., & Lüth, H. (2000). A Novel InAlAs/InGaAs Layer Structure for Monolithically Integrated Photoreceiver. Proceedings of 2000 Int. Conf. Indium Phosphide and Related Materials, 466. doi:10.1109/ICIPRM.2000.850334

Hunkel, D., Butz, R., Arens-Fischer, R., Marso, M., & Lüth, H. (1999). Interference filters from porous silicon with laterally varying wavelength of reflection. Journal of Luminescence, 80 (1999), 133-136. doi:10.1016/S0022-2313(98)00082-9
Peer Reviewed verified by ORBi

Schroth, P., Schöning, M. J., Schütz, S., Malkoc, Ü., Steffen, A., Marso, M., Hummel, H. E., Kordoš, P., & Lüth, H. (1999). Coupling of insect antennae to field-effect transistors for biochemical sensing. Electrochimica Acta, 44 (1999), 3821-3826. doi:10.1016/S0013-4686(99)00088-2
Peer Reviewed verified by ORBi

Moers, J., Klaes, D., Tönnesmann, A., Vescan, L., Wickenhäuser, S., Grabolla, T., Marso, M., Kordoš, P., & Lüth, H. (1999). Vertical p-MOSFETs with gate oxide deposition before selective epitaxial growth. Solid-State Electronics, 43 (1999), 529-535. doi:10.1016/S0038-1101(98)00301-3
Peer Reviewed verified by ORBi

Marso, M., Gersdorf, P., Fox, A., Förster, A., Hodel, U., Lambertini, R., & Kordoš, P. (1999). An InAlAs-InGaAs OPFET with Responsivity Above 200 A/W at 1.3 µm Wavelength. IEEE Photonics Technology Letters, 11, 117-119. doi:10.1109/68.736414
Peer Reviewed verified by ORBi

Moers, J., Klaes, D., Tönnesmann, A., Vescan, L., Wickenhäuser, S., Marso, M., Kordoš, P., & Lüth, H. (1999). 19 GHz vertical Si p-channel MOSFET. Electronics Letters, 35 (1999), 239-240. doi:10.1049/el:19990138
Peer reviewed

Kordoš, P., Förster, A., Marso, M., & Rüders, F. (1998). 550 GHz bandwidth photodetector on low-temperature grown molecular-beam epitaxial GaAs. Electronics Letters, 34 (1998), 119-120. doi:10.1049/el:19980039
Peer reviewed

Klaes, D., Moers, J., Tönnesmann, A., Grimm, M., Wickenhäuser, S., Vescan, L., Marso, M., Kordoš, P., & Lüth, H. (1998). Selectively Grown Vertical Si p-MOS Transistor with Reduced Overlap Capacitances. In Proceedings of the 28th European Solid State Devices Research Conference, Bordeaux, France (pp. 568-571). doi:10.1016/S0040-6090(98)01248-6

Klaes, D., Moers, J., Tönnesmann, A., Wickenhäuser, S., Vescan, L., Marso, M., Grabolla, T., Grimm, M., & Lüth, H. (1998). Selectively Grown Vertical Si MOS Transistor with Reduced Overlap Capacitances. Thin Solid Films, 336 (1998), 306-308. doi:10.1016/S0040-6090(98)01248-6
Peer Reviewed verified by ORBi

Kordoš, P., Marso, M., & Luysberg, M. (1998). Conduction in nonstoichiometric molecular-beam epitaxial GaAs grown above the critical thickness. Applied Physics Letters, 72, 1851-1853. doi:10.1063/1.121204
Peer reviewed

Marso, M., Horstmann, M., Hardtdegen, H., & Kordoš, P. (1998). Optoelectronic D.C. and R.F. behavior of InP/InGaAs Based HEMTs. Solid-State Electronics, 42 (1998), 197-200. doi:10.1016/S0038-1101(97)00228-1
Peer Reviewed verified by ORBi

Dillmann, F., Marso, M., Hardtdegen, H., Kordoš, P., Lüth, H., Brennemann, A., Tegude, F. J., Kwaspen, J. M. M., & Kaufmann, L. M. F. (1998). PIN-PJBT Integration: A New GaAs Based Optoelectronic Receiver. In Proceedings of the 28th European Solid State Devices Research Conference, Bordeaux, France (pp. 568-571). doi:10.1109/ASDAM.1998.730220

Marso, M., Gersdorf, P., Fox, A., Hodel, U., & Kordoš, P. (1998). Investigations on InAlAs/InGaAs OPFETs with different absorption layer thicknesses. In Proceedings of the 6th International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications (EDMO) (pp. 105-110).

Tomáška, M., Marso, M., Fox, A., & Kordoš, P. (1998). Microwave Properties of the MSM Photodetectors with 2-DEG. In Proc. 2nd International Conference on Advanced Semiconductor Devices and Microsystems (pp. 295-298). doi:10.1109/ASDAM.1998.730221

Marso, M., Horstmann, M., Hardtdegen, H., Kordoš, P., & Lüth, H. (1997). Electrical Behaviour of the InP/InGaAs Based MSM-2DEG Diode. Solid-State Electronics, 41 (1997), 25-31. doi:10.1016/S0038-1101(96)00138-4
Peer Reviewed verified by ORBi

Horstmann, M., Marso, M., & Kordoš, P. (1997). MSM Photodetectors Based on InP/InGaAs 2DEG Structures, in Optoelectronic Properties of Semiconductors and Superlattices. Gordon and Brerach Science Publishers.

Kordoš, P., Marso, M., Förster, A., Darmo, J., Betko, J., & Nimtz, G. (1997). Space-charge controlled conduction in low-temperature-grown molecular-beam epitaxial GaAs. Applied Physics Letters, 71, 1118-1120. doi:10.1063/1.119745
Peer reviewed

Krüger, M., Berger, M. G., Marso, M., Reetz, W., Eickhoff, T., Loo, R., Vescan, L., Thönissen, M., Lüth, H., Arens-Fischer, R., Hilbrich, S., & Theiss, W. (1997). Color-Sensistive Si-Photodiode Using Porous Silicon Interference Filters. Japanese Journal of Applied Physics, 36 (1997), 24-L26. doi:10.1143/jjap.36.l24
Peer Reviewed verified by ORBi

Krüger, M., Marso, M., Berger, M. G., Thönissen, M., Billat, S., Loo, R., Reetz, W., Lüth, H., Hilbrich, S., Arens-Fischer, R., & Grosse, P. (1997). Color-Sensitive Photodetector Based on Porous Silicon Superlattices. Thin Solid Films, 297 (1997), 241-244. doi:10.1016/S0040-6090(96)09414-X
Peer Reviewed verified by ORBi

Hardtdegen, H., Marso, M., Horstmann, M., Schimpf, K., Sommer, M., Jacob, G., & Kordoš, P. (1997). Demonstration of Nitrogen Carrier Gas in MOVPE For InP/InGaAs-Based High Frequency and Optoelectronic Integrated Devices. In Proceedings of the 9th International Conference on InP and Related Materials, Hyannis, Massachusetts, USA (pp. 320-323). doi:10.1109/ICIPRM.1997.600142

Marso, M., Horstmann, M., Schimpf, K., Muttersbach, J., Hardtdegen, H., Jacob, G., & Kordos, P. (1997). High Bandwidth InP/InGaAs Based MSM-2DEG Diodes For Optoelectronic Application. Proceedings of the 9th International Conference on InP and Related Materials, 494-497. doi:10.1109/ICIPRM.1997.600204

Schimpf, K., Sommer, M., Horstmann, M., Hollfelder, M., v.d.Hart, A., Marso, M., Kordoš, P., & Lüth, H. (1997). 0.1 µm T-gate Al-free InP/InGaAs/InP pHEMTs for W-Band Applications Using a Nitrogen Carrier for LP-MOCVD Growth. IEEE Electron Device Letters, 18, 144-146. doi:10.1109/55.563310
Peer reviewed

Marso, M., Fox, A., Förster, A., Schimpf, K., & Kordos, P. (1997). Optoelectronic DC and RF behaviour of InAlAs/InGaAs based HEMTs at 1.3µm wavelength. Proceedings of 3rd Asia-Pacific Conference on Communications, Sydney, Australia, 546-550.

Schimpf, K., Horstmann, M., Hardtdegen, H., Marso, M., & Kordoš, P. (1996). Thermionic Field Emission in p-Barrier enhanced InP/InGaAs/InP HEMTs. Electronics Letters, 32 (1996), 2132-2133. doi:10.1049/el:19961439
Peer reviewed

Horstmann, M., Schimpf, K., Marso, M., Fox, A., & Kordoš, P. (1996). 16 GHz Bandwidth MSM Photodetector and 45/85 GHz fT/fmax HEMT Prepared on an Identical InGaAs/InP Layer Structure. Electronics Letters, 32, 763-764. doi:10.1049/el:19960454
Peer reviewed

Horstmann, M., Hollfelder, M., Schimpf, K., Lehmann, R., Marso, M., & Kordoš, P. (1996). Simple Realization of a Monolithic Integrated Photoreceiver for 10GBit/s Using an InP/InGaAs Heterostructure. In Proceedings of the 8th International Conference on InP and Related Compounds, Schwäbisch Gmünd, Germany (pp. 215-218).

Horstmann, M., Hollfelder, M., Muttersbach, J., Schimpf, K., Marso, M., Kordoš, P., & Lüth, H. (1996). Frequency Response of InP/InGaAs MSM Photodetector with Current Transport Along 2DEG. Proceedings of the 8th International Conference on InP and Related Compounds, Schwäbisch Gmünd, Germany, 211-214.

Schimpf, K., Hollfelder, M., Horstmann, M., Marso, M., Hardtdegen, H., & Kordoš, P. (1996). 0.2µm T-gate InP/InGaAs/InP pHEMT with InGaP Diffusion Barrier Layer Grown by LP-MOCVD using an N2-Carrier. In Proceedings of the 8th International Conference on InP and Related Compounds, Schwäbisch Gmünd, Germany (pp. 666-669).

Krüger, M., Berger, M. G., Marso, M., Thönissen, M., Hilbrich, S., Theiß, W., Loo, R., Eickhoff, T., Reetz, W., Grosse, P., & Lüth, H. (1996). Integration of Porous Silicon Interference Filters in Si-Photodiodes. In Proceedings of the 26th European Solid State Devices Research Conference, Bologna, Italy (pp. 891-894).

Horstmann, M., Schimpf, K., Marso, M., & Kordoš, P. (1996). Monolithic Integrated Photoreceiver for 10GBit/s Systems Prepared on InGaAs/InP 2DEG Structure. In Proceedings of the International Conference on Telecommunications Istanbul, Turkye (pp. 636-639).

Horstmann, M., Hardtdegen, H., Schimpf, K., Muttersbach, J., Lehmann, R., Marso, M., & Kordoš, P. (1996). InP-Based Monolithically Integrated Photoreceiver for 4-10Gbit/s Optoelectronic Systems. In Proceedings of the Gallium Arsenide Application Symposium GAAS 96, Paris, France (pp. 3B2).

Horstmann, M., Marso, M., Muttersbach, J., Schimpf, K., & Kordoš, P. (1996). Responsivity Enhancement of InGaAs Based MSM Photodetectors Using 2DEG Layer Sequence and Semitransparent Electrodes. Electronics Letters, 32, 1613-1614. doi:10.1049/el:19961083
Peer reviewed

Schimpf, K., Hollfelder, M., Horstmann, M., Marso, M., Hardtdegen, & Kordos, P. (1996). 0.2µm T-gate InP/InGaAs/InP pHEMT with an InGaP Diffusion Barrier Layer Grown By LP-MOCVD Using an N2-carrier. In Proceedings of the 26th European Solid State Devices Research Conference, Bologna, Italy, 1996.

Horstmann, M., Marso, M., Schimpf, K., Hardtdegen, H., Hollfelder, M., Kordoš, P., & Novak, J. (1996). InP/GaInAs MSM Photodetector for Simple Integration in HEMT Circuits. Kluver Academic Publishers.

Horstmann, M., Muttersbach, J., v.d.Hart, A., Schimpf, K., Marso, M., Kordoš, P., & Lüth, H. (1996). Novel MSM-2DEG PD/HEMT Photoreceiver for 10 Gbit/s Operation. In Proceedings of the 26th European Solid State Devices Research Conference, Bologna, Italy (pp. 773-776).

Horstmann, M., Marso, M., Fox, A., Rüders, F., Hollfelder, M., Hardtdegen, H., Kordoš, P., & Lüth, H. (1995). InP/InGaAs Photodetector Based on a High Electron Mobility Transistor Layer Structure: Its Response at 1.3 µm wavelength. Applied Physics Letters, 67 (1995), 106-108. doi:10.1063/1.115497
Peer reviewed

Marso, M., Schimpf, K., Fox, A., v.d.Hart, A., Hardtdegen, H., Hollfelder, M., Kordoš, P., & Lüth, H. (1995). Novel HEMT layout: The RoundHEMT. Electronics Letters, 31 (1995), 589-591. doi:10.1049/el:19950367
Peer reviewed

Schöning, M. J., Sauke, M., Steffen, A., Marso, M., Kordoš, P., Lüth, H., Kauffmann, F., Erbach, R., & Hoffmann, B. G. (1995). Ion Sensitive Field Effect Transistors with Ultrathin Langmuir-Blodgett Membranes. Sensors and actuators. B, Chemical, 26-27 (1995), 325-328. doi:10.1016/0925-4005(94)01611-K
Peer reviewed

Frohnhoff, S., Marso, M., Berger, M. G., Thönissen, M., Lüth, H., & Münder, H. (1995). An Extended Quantum Model for Porous Silicon Formation. Journal of the Electrochemical Society, 142 (1995), 615-620. doi:10.1149/1.2044110
Peer Reviewed verified by ORBi

Horstmann, M., Marso, M., Schimpf, K., Rüders, F., v.d.Hart, A., Hollfelder, M., Hardtdegen, H., Kordoš, P., & Lüth, H. (1995). Novel InP/GaInAs Photodetector for Integration in HEMT Circuits. In Proceedings of the 25th European Solid State Devices Research Conference, Den Haag, The Netherlands (pp. 443-446).

Münder, H., Frohnhoff, S., Berger, M. G., Marso, M., Thönissen, M., Arens-Fischer, R., & Lüth, H. (1995). Extended Quantum Model For Porous Silicon Formation. In Mat. Res. Soc. Symp. Proc. Vol. 358 (pp. 315-320). Materials Research Society.

Schüppen, A., Marso, M., & Lüth, H. (1994). Overgrown PBT's: Calculations and Measurements. IEEE Transactions on Electron Devices, 41 (1994), 751-760. doi:10.1109/16.285028
Peer Reviewed verified by ORBi

Marso, M., Horstmann, M., Rüders, F., Hollricher, O., Hardtdegen, H., Kordoš, P., & Lüth, H. (1994). A Novel InP/InGaAs Photodetector Based on a 2DEG layer structure. In Proceedings of the 6th International Conference on InP and Related Compounds, Santa Barbara, California USA (pp. 512-515).

Schüppen, A., Jebasinski, R., Mantl, S., Marso, M., Lüth, H., Breuer, U., & Holzbrecher, H. (1994). Phosphorus Redistribution During the Formation of Buried CoSi2 Layers by Ion Beam Synthesis. Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms, 84, 143-147. doi:10.1016/0168-583X(94)95743-6
Peer Reviewed verified by ORBi

Schüppen, A., Vescan, L., Marso, M., v.d.Hart, A., Lüth, H., & Beneking, H. (1993). Submicrometer Silicon Permeable Base Transistors with Buried CoSi2 Gates. Electronics Letters, 29 (1993), 215-217. doi:10.1049/el:19930146
Peer reviewed

Kordoš, P., & Marso, M. (1993). Schottky Barriers and Ohmic Contacts on InGaAs, Properties of Lattice-matched and strained InGaAs. EMS Datareviews, (INSPEC IEE London), 131-155.
Peer reviewed

Meyer, R., Hardtdegen, H., Leuther, A., Marso, M., Kordoš, P., & Lüth, H. (1993). Optimization of Strained Ga1-xInxAs/InP Heterostructures Towards High Channel Conductivity for HEMT Application. In Proceedings of the 5th International Conference on InP and Related Compounds, Paris, France (pp. 485-488).

Marso, M., Kordoš, P., Fox, A., Meyer, R., Hardtdegen, H., & Lüth, H. (1993). A Novel InGaAs Schottky-2DEG Diode. In Proceedings of the 5th International Conference on InP and Related Compounds, Paris, France (pp. 397-400).

Kordoš, P., Marso, M., Meyer, R., & Lüth, H. (1992). Schottky Barrier Height Enhancement on n-In0.53Ga0.47As. Journal of Applied Physics, 72 (1992), 2347-2355. doi:10.1063/1.351576
Peer reviewed

Kordoš, P., Marso, M., Meyer, R., & Lüth, H. (1992). Schottky Contacts on n-In0.53Ga0.47As with Enhanced Barriers by Counter-Doped Interfacial Layers. IEEE Transactions on Electron Devices, 39 (1992), 1970-1972. doi:10.1109/16.144693
Peer Reviewed verified by ORBi

Kordoš, P., Marso, M., Fox, A., Hollfelder, M., & Lüth, H. (1992). n-InGaAs Schottky Diode with Current Transport along 2DEG Channel. Electronics Letters, 28 (1992), 1689-1690. doi:10.1049/el:19921074
Peer reviewed

Kordoš, P., Marso, M., Meyer, R., & Lüth, H. (1992). Enhanced Schottky Barriers on n-In.53Ga.47As Using pInGaAs, GaAs, InP and InGaP Surface layers. In Proceedings of the 4th International Conference on InP and Related Compounds, Newport, Rhode Island, USA (pp. 230-233).

Kordoš, P., Marso, M., & Lüth, H. (1992). Enhancement of the Schottky Barrier Height on n-InGaAs by Thin InP Interlayers. Journal of Electrical Engineering, 44 (1992), 367-371.
Peer Reviewed verified by ORBi

Marso, M., Zwinge, G., Grützmacher, D., Hergeth, J., & Beneking, H. (1991). GaInAs Camel transistors With Current Gain Above 6 at Room Temperature. Electronics Letters, 27 (1991), 335-337. doi:10.1049/el:19910212
Peer reviewed

Marso, M., Kordoš, P., Meyer, R., & Lüth, H. (1991). Quasi-Schottky Diodes on (n)In.53Ga.47As With Barrier Heights of 0.6eV. In Proceedings of the the MRS Fall Meeting, Symposium E, Boston, MA, USA (pp. 449-454).

Kordoš, P., Marso, M., Meyer, R., & Lüth, H. (1991). Barrier Height Enhancement of n-In0.53Ga0.47As Schottky Diodes Grown by MOCVD Technique. Electronics Letters, 27 (1991), 1759-1760. doi:10.1049/el:19911094
Peer reviewed

Marso, M., Zwinge, G., & Beneking, H. (1989). GaInAs Camel Transistors Grown by MOCVD. Electronics Letters, 25 (1989), 1462-1463. doi:10.1049/el:19890976
Peer reviewed

Marso, M., Chin, A., Bhattacharya, P., & Beneking, H. (1988). GaInAs camel diodes grown by MBE. Proceedings of the 18th European Solid State Device Research Conference (ESSDERC 88), Montpellier, France, 1988, J. de Physique, Colloque C4, suppl. 9, 4-717-C4-720. doi:10.1051/jphyscol:19884151

Beneking, H., Cloos, J.-M., Fernholz, G., Marso, M., & Vescan, L. (1987). Low-Noise Bulk Unipolar Devices in Si and GaAs. In Proceedings of the 17th European Solid State Devices Research Conference, Bologna, Italy (pp. 991-994).

Beneking, H., Vescan, L., Gruhle, A., Cloos, J. M., & Marso, M. (1986). Silicon Bulk Barrier Diodes Fabricated by LPVPE, High Speed Electronics. Springer.

Contact ORBilu