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Article (Scientific journals)
Barrier Height Enhancement of n-In0.53Ga0.47As Schottky Diodes Grown by MOCVD Technique
Kordoš, P.; Marso, Michel; Meyer, R. et al.
1991 • In Electronics Letters, 27 (1991), p. 1759-1760
Peer reviewed
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https://hdl.handle.net/10993/20763
DOI
10.1049/el:19911094
 

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Disciplines :
Electrical & electronics engineering
Identifiers :
UNILU:UL-ARTICLE-2009-301
Author, co-author :
Kordoš, P.;  Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, D-5170 Jülich, Germany
Marso, Michel ;  Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, D-5170 Jülich, Germany
Meyer, R.;  Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, D-5170 Jülich, Germany
Lüth, H.;  Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, D-5170 Jülich, Germany
External co-authors :
yes
Language :
English
Title :
Barrier Height Enhancement of n-In0.53Ga0.47As Schottky Diodes Grown by MOCVD Technique
Publication date :
1991
Journal title :
Electronics Letters
ISSN :
0013-5194
Publisher :
Institution of Engineering & Technology
Volume :
27
Issue :
1991
Pages :
1759-1760
Peer reviewed :
Peer reviewed
Available on ORBilu :
since 06 April 2015

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