Barrier Height Enhancement of n-In0.53Ga0.47As Schottky Diodes Grown by MOCVD Technique

Reference : Barrier Height Enhancement of n-In0.53Ga0.47As Schottky Diodes Grown by MOCVD Technique


	Document type :	Scientific journals : Article
	Discipline(s) :	Engineering, computing & technology : Electrical & electronics engineering
	To cite this reference:	http://hdl.handle.net/10993/20763

Title :	Barrier Height Enhancement of n-In0.53Ga0.47As Schottky Diodes Grown by MOCVD Technique
Language :	English
Author, co-author :	Kordoš, P. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, D-5170 Jülich, Germany]
	Marso, Michel [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, D-5170 Jülich, Germany]
	Meyer, R. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, D-5170 Jülich, Germany]
	Lüth, H. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, D-5170 Jülich, Germany]
Publication date :	1991
Journal title :	Electronics Letters
Publisher :	Institution of Engineering & Technology
Volume :	27
Issue/season :	1991
Pages :	1759-1760
Peer reviewed :	Yes (verified by ORBi^lu)
ISSN :	0013-5194
Permalink :	http://hdl.handle.net/10993/20763

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