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Barrier Height Enhancement of n-In0.53Ga0.47As Schottky Diodes Grown by MOCVD Technique
Kordoš, P.; Marso, Michel; Meyer, R. et al.
1991 • In Electronics Letters, 27 (1991), p. 1759-1760

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006_EL_27_1991_1759_1760.pdf

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