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Simple Realization of a Monolithic Integrated Photoreceiver for 10GBit/s Using an InP/InGaAs Heterostructure
Horstmann, M.; Hollfelder, M.; Schimpf, K. et al.
1996In Proceedings of the 8th International Conference on InP and Related Compounds, Schwäbisch Gmünd, Germany
 

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Disciplines :
Electrical & electronics engineering
Identifiers :
UNILU:UL-CONFERENCE-2009-422
Author, co-author :
Horstmann, M.;  Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany
Hollfelder, M.;  Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany
Schimpf, K.;  Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany
Lehmann, R.;  Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany
Marso, Michel ;  Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany
Kordoš, P.;  Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany
External co-authors :
yes
Language :
English
Title :
Simple Realization of a Monolithic Integrated Photoreceiver for 10GBit/s Using an InP/InGaAs Heterostructure
Publication date :
1996
Event name :
8th International Conference on InP and Related Compounds, Schwäbisch Gmünd, Germany
Event date :
1996
Main work title :
Proceedings of the 8th International Conference on InP and Related Compounds, Schwäbisch Gmünd, Germany
Pages :
215-218
Available on ORBilu :
since 31 March 2015

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