[en] AlGaN/GaN HEMTs on silicon substrates have been realised and their static and small signal characteristics investigated. The AlGaN/GaN (x=0.23) material structures were grown on (111) p-Si by LP-MOVPE. Devices exhibit a saturation current density of 0.53 to 0.68 A/mm and a peak extrinsic transconductance of 110 mS/mm. A unity gain frequency of 20 and 32 GHz and a maximum frequency of oscillation of 22 and 27 GHz are obtained for devices with a gate length of 0.7 and 0.5 mm, respectively. These values are the highest reported so far on AlGaN=GaN=Si HEMTs and are comparable to those known for devices using sapphire and SiC substrates.
Disciplines :
Ingénierie électrique & électronique
Identifiants :
UNILU:UL-ARTICLE-2009-296
Auteur, co-auteur :
Javorka, P.; Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
Alam, A.; AIXTRON AG, D-52072 Aachen, Germany
Fox, A.; Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
MARSO, Michel ; Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
Heuken, M.; AIXTRON AG, D-52072 Aachen, Germany
Kordoš, P.; Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
Co-auteurs externes :
yes
Langue du document :
Anglais
Titre :
AlGaN/GaN HEMTs on Silicon Substrates with f¬T of 32/20 GHz and fmax of 27/22 GHz for 0.5/0.7 µm gate length,
