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AlGaN/GaN HEMTs on Silicon Substrates with f¬T of 32/20 GHz and fmax of 27/22 GHz for 0.5/0.7 µm gate length,
Javorka, P.; Alam, A.; Fox, A. et al.
2002 • In Electronics Letters, 38 (2002), p. 288-289

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079_EL_38_2002_288_289.pdf

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