Reference : Low Current Dispersion and Low Bias-stress Degradation of Unpassivated GaN/AlGaN/GaN/...
Scientific journals : Article
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/10993/20459
Low Current Dispersion and Low Bias-stress Degradation of Unpassivated GaN/AlGaN/GaN/SiC HEMTs
English
Bernát, J. [Institute of Thin Films and Interfaces, Research Centre Jülich, 52425 Jülich, Germany]
Pierobon, R. [Department of Information Engineering, University of Padova, 35131 Padova, Italy]
Marso, Michel mailto [Institute of Thin Films and Interfaces, Research Centre Jülich, 52425 Jülich, Germany]
Flynn, J. [ATMI GaN, 7 Commerce Drive, Danbury, Connecticut 06810, USA]
Brandes, G. [ATMI GaN, 7 Commerce Drive, Danbury, Connecticut 06810, USA]
Meneghesso, G. [Department of Information Engineering, University of Padova, 35131 Padova, Italy]
Zanoni, E. [Department of Information Engineering, University of Padova, 35131 Padova, Italy]
Kordoš, P. [Institute of Thin Films and Interfaces, Research Centre Jülich, 52425 Jülich, Germany]
2005
Physica Status Solidi C. Current Topics in Solid State Physics
Wiley-VCH Verlag
2
7
2676-2679
Yes (verified by ORBilu)
1862-6351
1610-1634
Weinheim
Germany
[en] The performance of unpassivated GaN/AlGaN/GaN/SiC HEMTs with intentionally undoped and doped barrier structures are extensively studied. No drain current dispersion between DC and 50 ns pulses on doped devices and less than 10% dispersion on undoped ones is observed. The full (100%) current recovery on undoped sample was measured in 1μs. The drain current extrapolated from 2 GHz large signal measurements corresponds to the measured static drain current confirming negligible current dispersion of our devices. Insignificant (<5 %) degradation in overall device performance parameters (IDs, gm, fT, fmax, Pout) on both undoped and doped structures after 12-hour-long bias stress was obtained. These results documents that suitable device performances can be obtained also on unpassivated GaN-based HEMTs.
http://hdl.handle.net/10993/20459
10.1002/pssc.200461304

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