Reference : SiO2 /AlGaN/GaN MOSHFET with 0.7 µm gate-length and fmax / fT of 40/24 GHz
Scientific journals : Article
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/10993/20455
SiO2 /AlGaN/GaN MOSHFET with 0.7 µm gate-length and fmax / fT of 40/24 GHz
English
Bernát, J. [Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
Gregusová, D. [Institute of Electrical Engineering, Slovak Academy of Sciences, SK-84104 Bratislava, Slovak Republic]
Heidelberger, G. [Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
Fox, A. [Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
Marso, Michel mailto [Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
Lüth, H. [Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
Kordoš, P. [Institute of Electrical Engineering, Slovak Academy of Sciences, SK-84104 Bratislava, Slovak Republic]
2005
Electronics Letters
Institution of Electrical Engineers, London, ROYAUME-UNI
41
11
667-668
Yes (verified by ORBilu)
0013-5194
[en] The performance of SiO2/AlGaN/GaN MOSHFETs is described. The C–V measurements showed slight increase in sheet carrier density after applying 12 nm-thick PECVD SiO2. The devices exhibited gate leakage current of 5 .10 ^-10 A/mm. Small-signal RF characterisation of 0.7 mm gate length devices yielded an fT of 24 GHz and an fmax of 40 GHz, which are comparable to those typical for state-of-the-art AlGaN/GaN HFETs.
http://hdl.handle.net/10993/20455
10.1049/el:20050556

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