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SiO2 /AlGaN/GaN MOSHFET with 0.7 µm gate-length and fmax / fT of 40/24 GHz
Bernát, J.; Gregusová, D.; Heidelberger, G. et al.
2005 • In Electronics Letters, 41 (11), p. 667-668

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130_EL_41_2005_667_668.pdf

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