[en] In this comparative study we investigate the performance of AlGaN/GaN based MSM varactor diodes based on HFET and MOSHFET layer systems. Device fabrication uses standard HFET fabrication technology, allowing easy integration in MMICs. Devices with different electrode geometries are characterized by DC
and by S-parameter measurements up to 50 GHz. The HFET based varactors show capacitance ratios up to 14. The MOSHFET based devices, on the other hand, exhibit lower capacitance ratios and poorer stability because of theinsulation layer between electrodes and semiconductor.
Disciplines :
Ingénierie électrique & électronique
Auteur, co-auteur :
MARSO, Michel ; Institute of Bio- and Nanosystems (IBN1) and cni—Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany
Fox, A.; Institute of Bio- and Nanosystems (IBN1) and cni—Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany
Heidelberger, G.; Institute of Bio- and Nanosystems (IBN1) and cni—Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany
Kordos, P.; Institute of Electrical Engineering, Slovak Academy of Sciences, SK-84104 Bratislava, Slovak Republic, and Department of Microelectronics, Slovak University of Technology, SK-81219 Bratislava, Slovak Republic
Lüth, H.; Institute of Bio- and Nanosystems (IBN1) and cni—Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany
Langue du document :
Anglais
Titre :
Comparison of AlGaN/GaN MSM varactor diodes based on HFET and MOSHFET layer structures
