Reference : Comparison of AlGaN/GaN MSM varactor diodes based on HFET and MOSHFET layer structures

	Document type :	Scientific congresses, symposiums and conference proceedings : Paper published in a book
	Discipline(s) :	Engineering, computing & technology : Electrical & electronics engineering
	To cite this reference:	http://hdl.handle.net/10993/20423

Title :	Comparison of AlGaN/GaN MSM varactor diodes based on HFET and MOSHFET layer structures
Language :	English
Author, co-author :	Marso, Michel [Institute of Bio- and Nanosystems (IBN1) and cni—Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
	Fox, A. [Institute of Bio- and Nanosystems (IBN1) and cni—Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
	Heidelberger, G. [Institute of Bio- and Nanosystems (IBN1) and cni—Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
	Kordos, P. [Institute of Electrical Engineering, Slovak Academy of Sciences, SK-84104 Bratislava, Slovak Republic, and Department of Microelectronics, Slovak University of Technology, SK-81219 Bratislava, Slovak Republic]
	Lüth, H. [Institute of Bio- and Nanosystems (IBN1) and cni—Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
Publication date :	2006
Main document title :	Proc. 6th Intern. Conf. Advanced Semicon. Dev. & Microsystems ASDAM’06
Peer reviewed :	No
Event name :	6th Intern. Conf. Advanced Semicon. Dev. & Microsystems ASDAM’06
Event date :	2006
Abstract :	[en] In this comparative study we investigate the performance of AlGaN/GaN based MSM varactor diodes based on HFET and MOSHFET layer systems. Device fabrication uses standard HFET fabrication technology, allowing easy integration in MMICs. Devices with different electrode geometries are characterized by DC and by S-parameter measurements up to 50 GHz. The HFET based varactors show capacitance ratios up to 14. The MOSHFET based devices, on the other hand, exhibit lower capacitance ratios and poorer stability because of theinsulation layer between electrodes and semiconductor.
Permalink :	http://hdl.handle.net/10993/20423

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