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Comparison of AlGaN/GaN MSM varactor diodes based on HFET and MOSHFET layer structures
Marso, Michel; Fox, A.; Heidelberger, G. et al.
2006 • In Proc. 6th Intern. Conf. Advanced Semicon. Dev. & Microsystems ASDAM’06

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148_ASDAM_2006_229-232.pdf

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