Spatially resolved measurements of depletion properties of large gate two-dimensional electron gas semiconductor terahertz modulators

Reference : Spatially resolved measurements of depletion properties of large gate two-dimensional...


	Document type :	Scientific journals : Article
	Discipline(s) :	Engineering, computing & technology : Electrical & electronics engineering
	To cite this reference:	http://hdl.handle.net/10993/6790

Title :	Spatially resolved measurements of depletion properties of large gate two-dimensional electron gas semiconductor terahertz modulators
Language :	English
Author, co-author :	Kleine-Ostmann, T. [Technische Universität Braunschweig, Schleinitzstraße 22, D-38106 Braunschweig, Germany > Institut für Hochfrequenztechnik]
	Pierz, K. [Physikalisch-Technische Bundesanstalt, Bundesallee 100, D-38116 Braunschweig, Germany]
	Hein, G. [Physikalisch-Technische Bundesanstalt, Bundesallee 100, D-38116 Braunschweig, Germany]
	Dawson, P. [University of Manchester, Manchester M60 1QD, United Kingdom > Photon Science Institute, Alan Turing Building, School of Physics and Astronomy]
	Marso, Michel [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Engineering Research Unit >]
	Koch, Martin [Technische Universität Braunschweig, Schleinitzstraße 22, D-38106 Braunschweig, Germany > Institut für Hochfrequenztechnik]
Publication date :	2009
Journal title :	Journal of Applied Physics
Publisher :	American Institute of Physics
Volume :	105
Issue/season :	9
Pages :	093707-1-093707-6
Peer reviewed :	Yes (verified by ORBi^lu)
Audience :	International
ISSN :	0021-8979
City :	Melville
Country :	NY
Permalink :	http://hdl.handle.net/10993/6790
DOI :	10.1063/1.3122595

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