Comparison of AlGaN/GaN HFETs and MOSHFETs in prospect of oscillator design

Reference : Comparison of AlGaN/GaN HFETs and MOSHFETs in prospect of oscillator design


	Document type :	Scientific congresses, symposiums and conference proceedings : Paper published in a book
	Discipline(s) :	Engineering, computing & technology : Electrical & electronics engineering
	To cite this reference:	http://hdl.handle.net/10993/6524

Title :	Comparison of AlGaN/GaN HFETs and MOSHFETs in prospect of oscillator design
Language :	English
Author, co-author :	Fox, Alfred []
	Mikulics, Martin [> >]
	Strang, B. [> >]
	Marso, Michel [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Engineering Research Unit >]
	Grützmacher, Detlev [> >]
	Kordos, Peter [> >]
Publication date :	2010
Main document title :	The Eighth International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010
Pages :	159 - 162
Peer reviewed :	No
Audience :	International
ISBN :	978-1-4244-8572-7
Event name :	ASDAM 2010, The Eighth International Conference on Advanced Semiconductor Devices and Microsystems
Event date :	25 – 27 October 2010
Event place (city) :	Smolenice
Event country :	Slovakia
Target :	Researchers ; Professionals ; Students
Permalink :	http://hdl.handle.net/10993/6524

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