Article (Scientific journals)
Electrical and structural characterization of AlGaN/GaN field-effect transistors with recessed gate
Mikulics, Martin; Fox, Alfred; Marso, Michel et al.
2012In Vacuum, 86 (6), p. 754 - 756
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Keywords :
Gallium nitride; Plasma assisted etching; Electrical properties; Photoluminescence; Transistor
Abstract :
[en] Performance of AlGaN/GaN heterostructure field-effect transistors (HFETs) with recessed gate was investigated and compared with non-recessed counterparts. Optimal dry etch conditions by plasma assisted Ar sputtering were found for ~6 nm gate recess of a 20 nm thick AlGaN barrier layer. A decrease of the residual strain after the gate recessing (from -0.9 GPa to -0.68 GPa) was evaluated from the photoluminescence measurement. The saturation drain current at the gate voltage VG = 1 V decreased from 1.05 A/mm to 0.85 A/mm after the recessing. The gate voltage for a maximal transconductance (240-250 mS/mm) has shifted from -3 V for non-recessed HFETs to -0.2 V for recessed counterparts. Similarly, the threshold voltage increased after the gate recessing. A decrease of the sheet charge density from 1 x 10 13 cm-2 to4 x 10 12 cm-2 at VG = 0 V has been evaluated from the capacitance measurements. The RF measurements yielded a slight increase of the cut-off frequencies after the gate recessing. All these indicate that the gate recessing is a useful tool to optimize the AlGaN/GaN HFET performance for high-frequency applications as well as for the preparation of normally-off devices.
Disciplines :
Electrical & electronics engineering
Identifiers :
UNILU:UL-ARTICLE-2012-252
Author, co-author :
Mikulics, Martin;  Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich, Germany
Fox, Alfred;  Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich, Germany
Marso, Michel ;  University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Engineering Research Unit
Grützmacher, Detlev;  Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich, Germany
Donoval, Daniel;  Institute of Electrical Engineering, Slovak Academy of Sciences, Bratislava, Slovakia
Kordos, Peter;  Department of Microelectronics, Slovak University of Technology, Bratislava, Slovakia
Language :
English
Title :
Electrical and structural characterization of AlGaN/GaN field-effect transistors with recessed gate
Publication date :
2012
Journal title :
Vacuum
ISSN :
0042-207X
Publisher :
Elsevier
Volume :
86
Issue :
6
Pages :
754 - 756
Peer reviewed :
Peer Reviewed verified by ORBi
Available on ORBilu :
since 10 September 2013

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