[en] Micro-photoluminescence (μ-PL) studies were performed on AlGaN/GaN heterostructure field effect transistors (HFETs) with different gate-recessing depths. It was found that μ-PL is the method of choice for detecting dry etching damage and simultaneously recording strain and stress in the HFET GaN layer. Lateral sub-μm resolved mapping shows that the strain in the GaN layer after recessing is partially relaxed and non-uniform.
Disciplines :
Electrical & electronics engineering
Identifiers :
UNILU:UL-ARTICLE-2012-693
Author, co-author :
Mikulics, Martin; Peter Grünberg Institute (PGI-9), Forschungszentrum Jüllich, D-52425 J¨ulich, Germany and Jülich-Aachen Research Alliance, JARA, Fundamentals of Future Information Technology, Germany
Hardtdegen, Hilde; Peter Grünberg Institute (PGI-9), Forschungszentrum Jüllich, D-52425 Jülich, Germany and Jülich-Aachen Research Alliance, JARA, Fundamentals of Future Information Technology, Germany
Gregušová, Dagmar; Institute of Electrical Engineering, Slovak Academy of Sciences, SK-84104 Bratislava, Slovakia
Sofer, Zdenĕk; Department of Inorganic Chemistry, Institute of Chemical Technology, Technická 5, Prague 6,Czech Republic
Šimek, P.; Department of Inorganic Chemistry, Institute of Chemical Technology, Technická 5, Prague 6,Czech Republic
Trellenkamp, Stefan; Peter Grünberg Institute (PGI-9), Forschungszentrum Jüllich, D-52425 J¨ulich, Germany and Jülich-Aachen Research Alliance, JARA, Fundamentals of Future Information Technology, Germany
Grützmacher, Detlev; Peter Grünberg Institute (PGI-9), Forschungszentrum Jüllich, D-52425 J¨ulich, Germany and Jülich-Aachen Research Alliance, JARA, Fundamentals of Future Information Technology, Germany
Lüth, Hans; Peter Grünberg Institute (PGI-9), Forschungszentrum Jüllich, D-52425 Jülich, Germany and Jülich-Aachen Research Alliance, JARA, Fundamentals of Future Information Technology, Germany
Kordoš, Peter; Institute of Electrical Engineering, Slovak Academy of Sciences, SK-84104 Bratislava, Slovakia, and Department of Microelectronics, Slovak University of Technology, SK-81219 Bratislava, Slovakia
MARSO, Michel ; University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Engineering Research Unit
Language :
English
Title :
Non-uniform distribution of induced strain in gate-recessed AlGaN/GaN structure evaluated by micro-PL measurements
