Reference : Non-uniform distribution of induced strain in gate-recessed AlGaN/GaN structure evalu...

	Document type :	Scientific journals : Article
	Discipline(s) :	Engineering, computing & technology : Electrical & electronics engineering
	To cite this reference:	http://hdl.handle.net/10993/5816

Title :	Non-uniform distribution of induced strain in gate-recessed AlGaN/GaN structure evaluated by micro-PL measurements
Language :	English
Author, co-author :	Mikulics, Martin [Peter Grünberg Institute (PGI-9), Forschungszentrum Jüllich, D-52425 J¨ulich, Germany and Jülich-Aachen Research Alliance, JARA, Fundamentals of Future Information Technology, Germany]
	Hardtdegen, Hilde [Peter Grünberg Institute (PGI-9), Forschungszentrum Jüllich, D-52425 Jülich, Germany and Jülich-Aachen Research Alliance, JARA, Fundamentals of Future Information Technology, Germany]
	Gregušová, Dagmar [Institute of Electrical Engineering, Slovak Academy of Sciences, SK-84104 Bratislava, Slovakia]
	Sofer, Zdenĕk [Department of Inorganic Chemistry, Institute of Chemical Technology, Technická 5, Prague 6,Czech Republic]
	Šimek, P. [Department of Inorganic Chemistry, Institute of Chemical Technology, Technická 5, Prague 6,Czech Republic]
	Trellenkamp, Stefan [Peter Grünberg Institute (PGI-9), Forschungszentrum Jüllich, D-52425 J¨ulich, Germany and Jülich-Aachen Research Alliance, JARA, Fundamentals of Future Information Technology, Germany]
	Grützmacher, Detlev [Peter Grünberg Institute (PGI-9), Forschungszentrum Jüllich, D-52425 J¨ulich, Germany and Jülich-Aachen Research Alliance, JARA, Fundamentals of Future Information Technology, Germany]
	Lüth, Hans [Peter Grünberg Institute (PGI-9), Forschungszentrum Jüllich, D-52425 Jülich, Germany and Jülich-Aachen Research Alliance, JARA, Fundamentals of Future Information Technology, Germany]
	Kordoš, Peter [Institute of Electrical Engineering, Slovak Academy of Sciences, SK-84104 Bratislava, Slovakia, and Department of Microelectronics, Slovak University of Technology, SK-81219 Bratislava, Slovakia]
	Marso, Michel [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Engineering Research Unit >]
Publication date :	2012
Journal title :	Semiconductor Science and Technology
Publisher :	IOP Publishing
Volume :	27
Issue/season :	10
Pages :	105008 - 105008
Peer reviewed :	Yes (verified by ORBilu)
ISSN :	0268-1242
Keywords :	[en] Micro-photoluminescence ; photoluminescence ; GaN ; HFET
Abstract :	[en] Micro-photoluminescence (μ-PL) studies were performed on AlGaN/GaN heterostructure field effect transistors (HFETs) with different gate-recessing depths. It was found that μ-PL is the method of choice for detecting dry etching damage and simultaneously recording strain and stress in the HFET GaN layer. Lateral sub-μm resolved mapping shows that the strain in the GaN layer after recessing is partially relaxed and non-uniform.
Permalink :	http://hdl.handle.net/10993/5816
DOI :	10.1088/0268-1242/27/10/105008
Commentary :	1.723

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