Article (Scientific journals)
Residual strain in recessed AlGaN/GaN heterostructure field-effect transistors evaluated by micro photoluminescence measurements
Mikulics, Martin; Hardtdegen, Hilde; Winden, Andreas et al.
2012In Physica Status Solidi C. Current Topics in Solid State Physics, 9 (3-4), p. 911 - 914
Peer reviewed
 

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Keywords :
Gate recess; Heterostructure field-effect transistor; Micro-photoluminescence; Nitrides; Residual strain
Abstract :
[en] The residual strain in AlGaN/GaN heterostructure field-effect transistors (HFETs) with recessed gates and their non-recessed counterparts were investigated by micro photoluminescence measurements (μ-PL). It is found that strain relaxation accounts for the observed sheet carrier density reduction after gate recessing. The usefulness of the method for device processing optimization is demonstrated. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Disciplines :
Electrical & electronics engineering
Identifiers :
UNILU:UL-ARTICLE-2012-1284
Author, co-author :
Mikulics, Martin;  Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, 52425 Jülich, Germany and Jülich Aachen Research Alliance (JARA), Fundamentals of Future Information Technology, Germany
Hardtdegen, Hilde;  Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, 52425 Jülich, Germany and Jülich Aachen Research Alliance (JARA), Fundamentals of Future Information Technology, Germany
Winden, Andreas;  Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, 52425 Jülich, Germany and Jülich Aachen Research Alliance (JARA), Fundamentals of Future Information Technology, Germany
Fox, Alfred;  Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, 52425 Jülich, Germany and Jülich Aachen Research Alliance (JARA), Fundamentals of Future Information Technology, Germany
Marso, Michel ;  University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Engineering Research Unit
Sofer, Zdenek;  Department of Inorganic Chemistry, Institute of Chemical Technology, Technická 5, Prague 6, Czech Republic
Lüth, Hans;  Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, 52425 Jülich, Germany and Jülich Aachen Research Alliance (JARA), Fundamentals of Future Information Technology, Germany
Grützmacher, Detlev;  Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, 52425 Jülich, Germany and Jülich Aachen Research Alliance (JARA), Fundamentals of Future Information Technology, Germany
Kordos, Peter;  Institute of Electrical Engineering, Slovak Academy of Sciences, Bratislava, Slovakia and Department of Microelectronics, Slovak University of Technology, Bratislava, Slovakia
Language :
English
Title :
Residual strain in recessed AlGaN/GaN heterostructure field-effect transistors evaluated by micro photoluminescence measurements
Publication date :
2012
Journal title :
Physica Status Solidi C. Current Topics in Solid State Physics
ISSN :
1862-6351
eISSN :
1610-1634
Publisher :
Wiley-VCH Verlag
Volume :
9
Issue :
3-4
Pages :
911 - 914
Peer reviewed :
Peer reviewed
Available on ORBilu :
since 10 September 2013

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