[en] We have fabricated and characterized ultrafast metal–semiconductor–metal (MSM) photodetectors integrated with metal–semiconductor–field-effect-transistors (MESFETs) integrated in coplanar strip lines in the GaN/AlN/SiC material system. We recorded electrical transients of the single photodetector as short as 0.9 ps wide by optoelectric pump–probe measurements using 360-nm-wavelength and 100-fs-duration laser pulses. Electric photoresponse transients of the photodetector with 6-mV peak amplitude were amplified by the MESFET, resulting in 4-ps-wide and 35-mV peak amplitude signals. This monolithically integrated optoelectronic circuit is presented as a potential candidate for high-speed ultraviolet optoelectronics
Disciplines :
Ingénierie électrique & électronique
Identifiants :
UNILU:UL-ARTICLE-2011-333
Auteur, co-auteur :
Mikulics, M.
Kordoš, P.
Gregušová, D.
Adam, R.
Kočan, M.
Wu, S.
Zhang, J.
Sobolewski, R.
Grützmacher, D.
MARSO, Michel ; University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Engineering Research Unit
Langue du document :
Anglais
Titre :
Monolithic Integration of Ultrafast Photodetector and MESFET in the GaN Material System
