Article (Scientific journals)
Origin of the Flat Band in Heavily Cs-Doped Graphene
Ehlen, N; Hell, M; Marini, G et al.
2020In ACS Nano, 14 (1), p. 1055
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Keywords :
Flat band; Cs-doped graphene; ARPES and Raman spectroscopy
Abstract :
[en] A flat energy dispersion of electrons at the Fermi level of a material leads to instabilities in the electronic system and can drive phase transitions. Here we show that the flat band in graphene can be achieved by sandwiching a graphene monolayer by two cesium (Cs) layers. We investigate the flat band by a combination of angle-resolved photoemission spectroscopy experiment and the calculations. Our work highlights that charge transfer, zone folding of graphene bands, and the covalent bonding between C and Cs atoms are the origin of the flat energy band formation. Analysis of the Stoner criterion for the flat band suggests the presence of a ferromagnetic instability. The presented approach is an alternative route for obtaining flat band materials to twisting bilayer graphene which yields thermodynamically stable flat band materials in large areas.
Disciplines :
Physics
Author, co-author :
Ehlen, N
Hell, M
Marini, G
Hasdeo, Eddwi Hesky  ;  University of Luxembourg > Faculty of Science, Technology and Medicine (FSTM) > Department of Physics and Materials Science (DPHYMS)
Saito, R
Falke, Y
Goerbig, M O
Di Santo, G
Petaccia, L
Profeta, G
Gruneis, A
External co-authors :
yes
Language :
English
Title :
Origin of the Flat Band in Heavily Cs-Doped Graphene
Publication date :
2020
Journal title :
ACS Nano
ISSN :
1936-086X
Publisher :
American Chemical Society, Washington, United States - District of Columbia
Volume :
14
Issue :
1
Pages :
1055
Peer reviewed :
Peer Reviewed verified by ORBi
Focus Area :
Physics and Materials Science
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