Reference : Origin of the Flat Band in Heavily Cs-Doped Graphene
Scientific journals : Article
Physical, chemical, mathematical & earth Sciences : Physics
Physics and Materials Science
http://hdl.handle.net/10993/45601
Origin of the Flat Band in Heavily Cs-Doped Graphene
English
Ehlen, N []
Hell, M []
Marini, G []
Hasdeo, Eddwi Hesky mailto [University of Luxembourg > Faculty of Science, Technology and Medicine (FSTM) > Department of Physics and Materials Science (DPHYMS) >]
Saito, R []
Falke, Y []
Goerbig, M O []
Di Santo, G []
Petaccia, L []
Profeta, G []
Gruneis, A []
2020
ACS Nano
American Chemical Society
14
1
1055
Yes (verified by ORBilu)
International
1936-0851
1936-086X
Washington
DC
[en] Flat band ; Cs-doped graphene ; ARPES and Raman spectroscopy
[en] A flat energy dispersion of electrons at the Fermi level of a material leads to instabilities in the electronic system and can drive phase transitions. Here we show that the flat band in graphene can be achieved by sandwiching a graphene monolayer by two cesium (Cs) layers. We investigate the flat band by a combination of angle-resolved photoemission spectroscopy experiment and the calculations. Our work highlights that charge transfer, zone folding of graphene bands, and the covalent bonding between C and Cs atoms are the origin of the flat energy band formation. Analysis of the Stoner criterion for the flat band suggests the presence of a ferromagnetic instability. The presented approach is an alternative route for obtaining flat band materials to twisting bilayer graphene which yields thermodynamically stable flat band materials in large areas.
http://hdl.handle.net/10993/45601
10.1021/acsnano.9b08622
https://doi.org/10.1021/acsnano.9b08622

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