We investigated the electrical properties of epitaxial Cu-rich CuInSe 2 by Kelvin probe force microscopy (KPFM) under ambient and ultra-high vacuum conditions. We first measured the sample under ambient conditions before and after potassium cyanide (KCN) etching. In both cases, we do not see any substantial contrast in the surface potential data; furthermore, after the KCN etching we observed outgrowths with a height around 2nm over the sample surface. On the other hand, the KPFM measurements under ultra-high vacuum conditions show a work function dependence according to the surface orientation of the Cu-rich CuInSe 2 crystal. Our results show the possibility to increase the efficiency of epitaxial Cu-rich CuInSe 2 by growing the materials in the appropriated surface orientation where the variations in work function are reduced.
Disciplines :
Physique
Auteur, co-auteur :
MARTIN LANZONI, Evandro ; University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit
SPINDLER, Conrad ; University of Luxembourg > Luxembourg Centre for Systems Biomedicine (LCSB) > Physics and Materials Science Research Unit
RAMIREZ SANCHEZ, Omar ; University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit
MELCHIORRE, Michele ; University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit
SIEBENTRITT, Susanne ; University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit
REDINGER, Alex ; University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit
Lanzoni, Evandro; University of Luxembourg
Co-auteurs externes :
yes
Langue du document :
Anglais
Titre :
Surface characterization of epitaxial Cu-rich CuInSe2 absorbers
