Reference : Ultrafast carrier recombination in highly n-doped Ge-on-Si films
Scientific journals : Article
Physical, chemical, mathematical & earth Sciences : Physics
http://hdl.handle.net/10993/41952
Ultrafast carrier recombination in highly n-doped Ge-on-Si films
English
Allerbeck, J. []
Herbst, A. J. []
Yamamoto, Y. []
Capellini, G. []
Virgilio, M. []
Brida, Daniele mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit]
2019
APPLIED PHYSICS LETTERS
AMER INST PHYSICS
114
24
Yes (verified by ORBilu)
0003-6951
1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501 USA
[en] We study the femtosecond carrier dynamics of n-type doped and biaxially strained Ge-on-Si films which occurs upon impulsive photoexcitation by means of broadband near-IR transient absorption spectroscopy. The modeling of the experimental data takes into account the static donor density in a modified rate equation for the description of the temporal recombination dynamics. The measurements confirm the negligible contribution at a high n-type doping concentration, in the 10(19)cm(-3) range, of Auger processes as compared to defect-related Shockley-Read-Hall recombination. Energy resolved dynamics reveal further insights into the doping-related band structure changes and suggest a reshaping of direct and indirect conduction band valleys to a single effective valley along with a significant spectral broadening of the optical transitions.
http://hdl.handle.net/10993/41952
10.1063/1.5088012 241104
Article

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