Article (Scientific journals)
Ultrafast carrier recombination in highly n-doped Ge-on-Si films
Allerbeck, J.; Herbst, A. J.; Yamamoto, Y. et al.
2019In APPLIED PHYSICS LETTERS, 114 (24)
Peer reviewed
 

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Abstract :
[en] We study the femtosecond carrier dynamics of n-type doped and biaxially strained Ge-on-Si films which occurs upon impulsive photoexcitation by means of broadband near-IR transient absorption spectroscopy. The modeling of the experimental data takes into account the static donor density in a modified rate equation for the description of the temporal recombination dynamics. The measurements confirm the negligible contribution at a high n-type doping concentration, in the 10(19)cm(-3) range, of Auger processes as compared to defect-related Shockley-Read-Hall recombination. Energy resolved dynamics reveal further insights into the doping-related band structure changes and suggest a reshaping of direct and indirect conduction band valleys to a single effective valley along with a significant spectral broadening of the optical transitions.
Disciplines :
Physics
Author, co-author :
Allerbeck, J.
Herbst, A. J.
Yamamoto, Y.
Capellini, G.
Virgilio, M.
Brida, Daniele ;  University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit
External co-authors :
no
Language :
English
Title :
Ultrafast carrier recombination in highly n-doped Ge-on-Si films
Publication date :
2019
Journal title :
APPLIED PHYSICS LETTERS
ISSN :
0003-6951
Publisher :
AMER INST PHYSICS, 1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501 USA, Unknown/unspecified
Volume :
114
Issue :
24
Peer reviewed :
Peer reviewed
Commentary :
Article
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since 23 January 2020

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