[en] This article outlines a method for stabilising the current continuity equations which are used for semiconductor device simulation. Residual-free bubble functions (RfBF) are incorporated into a finite element (FE) implementation that are able to prevent oscillations which are seen when using the conventional Bubnov-Galerkin FE implementation. In addition, it is shown that the RfBF are able to provide stabilisation with very distorted meshes and curved interface boundaries. Comparison with the commonly used SUPG scheme is made throughout, showing that in the case of 2D problems the RfBF allow faster convergence of the coupled semiconductor device equations, especially in the case of distorted meshes.
Disciplines :
Ingénierie, informatique & technologie: Multidisciplinaire, généralités & autres
Auteur, co-auteur :
Simpson, R. N.; School of Engineering, Institute of Mechanics and Advanced Materials, Cardiff University, Cardiff CF24 3AA, United Kingdom
BORDAS, Stéphane ; University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Engineering Research Unit
Asenov, A.; School of Engineering, University of Glasgow, Rankine Building, Oakfield Avenue, Glasgow G12 8LT, United Kingdom
Brown, A. R.; School of Engineering, Institute of Mechanics and Advanced Materials, Cardiff University, Cardiff CF24 3AA, United Kingdom
Co-auteurs externes :
yes
Langue du document :
Anglais
Titre :
Enriched residual free bubbles for semiconductor device simulation
Date de publication/diffusion :
2012
Titre du périodique :
Computational Mechanics
ISSN :
0178-7675
Volume/Tome :
50
Fascicule/Saison :
1
Pagination :
119-133
Peer reviewed :
Peer reviewed
Focus Area :
Computational Sciences
Organisme subsidiant :
EPSRC grant EP/G069352/1 “Advanced discretisation strategies for ’atomistic’ nano CMOS simulation”.
