Reference : Thickness dependence of the resistivity of platinum-group metal thin films
Scientific journals : Article
Physical, chemical, mathematical & earth Sciences : Physics
Physics and Materials Science
http://hdl.handle.net/10993/33813
Thickness dependence of the resistivity of platinum-group metal thin films
English
Dutta, S. [Imec, Leuven, Belgium]
Sankaran, K. [Imec, Leuven, Belgium]
Moors, Kristof mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit]
Pourtois, G. [Imec, Leuven, Belgium]
Van Elshocht, S. [Imec, Leuven, Belgium]
Bömmels, J. [Imec, Leuven, Belgium]
Vandervorst, W. [Imec, Leuven, Belgium]
Tokei, Z. [Imec, Leuven, Belgium]
Adelmann, C. [Imec, Leuven, Belgium]
2017
Journal of Applied Physics
American Institute of Physics Inc.
122
2
Yes (verified by ORBilu)
International
00218979
[en] Interfaces (materials) ; Thickness dependence ; Thin films ; Grain boundaries ; Copper ; Iridium ; Platinum ; Platinum metals ; Ruthenium ; Surface scattering ; Ab initio calculations ; Electron mean free path ; Grain boundary scattering ; Mayadas-Shatzkes model ; Platinum group metals ; Specular scattering ; Surrounding materials
[en] We report on the thin film resistivity of several platinum-group metals (Ru, Pd, Ir, and Pt). Platinum-group thin films show comparable or lower resistivities than Cu for film thicknesses below about 5 nm due to a weaker thickness dependence of the resistivity. Based on experimentally determined mean linear distances between grain boundaries as well as ab initio calculations of the electron mean free path, the data for Ru, Ir, and Cu were modeled within the semiclassical Mayadas-Shatzkes model [Phys. Rev. B 1, 1382 (1970)] to assess the combined contributions of surface and grain boundary scattering to the resistivity. For Ru, the modeling results indicated that surface scattering was strongly dependent on the surrounding material with nearly specular scattering at interfaces with SiO2 or air but with diffuse scattering at interfaces with TaN. The dependence of the thin film resistivity on the mean free path is also discussed within the Mayadas-Shatzkes model in consideration of the experimental findings.
Researchers
http://hdl.handle.net/10993/33813
10.1063/1.4992089

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