Reference : Finite Size Effects in Highly Scaled Ruthenium Interconnects
Scientific journals : Article
Physical, chemical, mathematical & earth Sciences : Physics
Physics and Materials Science
Finite Size Effects in Highly Scaled Ruthenium Interconnects
Dutta, Shibesh mailto [KU Leuven > Physics and Astronomy]
Moors, Kristof mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
Vandemaele, Michiel [KU Leuven > Electrical Engineering]
Adelmann, Christoph [imec]
IEEE Electron Device Letters
Yes (verified by ORBilu)
[en] ruthenium ; nanowires ; thin films ; resistivity modeling
[en] Ru has been considered a candidate to replace Cu-based interconnects in VLSI circuits. Here, a methodology is proposed to predict the resistivity of (Ru) interconnects. First, the dependence of the Ru thin film resistivity on the film thickness is modeled by the semiclassical Mayadas-Shatzkes (MS) approach. The fitting parameters thus obtained are then used as input in a modified MS model for nanowires to calculate wire resistivities. Predicted experimental resistivities agreed within about 10%. The results further indicate that grain boundary scattering was the dominant scattering mechanism in scaled Ru interconnects.
Researchers ; Professionals

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