Article (Scientific journals)
Finite Size Effects in Highly Scaled Ruthenium Interconnects
Dutta, Shibesh; Moors, Kristof; Vandemaele, Michiel et al.
2018In IEEE Electron Device Letters
Peer reviewed
 

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Keywords :
ruthenium; nanowires; thin films; resistivity modeling
Abstract :
[en] Ru has been considered a candidate to replace Cu-based interconnects in VLSI circuits. Here, a methodology is proposed to predict the resistivity of (Ru) interconnects. First, the dependence of the Ru thin film resistivity on the film thickness is modeled by the semiclassical Mayadas-Shatzkes (MS) approach. The fitting parameters thus obtained are then used as input in a modified MS model for nanowires to calculate wire resistivities. Predicted experimental resistivities agreed within about 10%. The results further indicate that grain boundary scattering was the dominant scattering mechanism in scaled Ru interconnects.
Disciplines :
Physics
Author, co-author :
Dutta, Shibesh;  KU Leuven > Physics and Astronomy
Moors, Kristof ;  University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit
Vandemaele, Michiel;  KU Leuven > Electrical Engineering
Adelmann, Christoph;  imec
External co-authors :
yes
Language :
English
Title :
Finite Size Effects in Highly Scaled Ruthenium Interconnects
Publication date :
2018
Journal title :
IEEE Electron Device Letters
ISSN :
0741-3106
Publisher :
IEEE, Piscataway, United States - New Jersey
Peer reviewed :
Peer reviewed
Focus Area :
Physics and Materials Science
Available on ORBilu :
since 02 January 2018

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