[en] Vertically integrated III-nitride based nano-LEDs (light emitting diodes) were designed and fabricated for operation in the telecommunication wavelength range in the (p-GaN/InGaN/n-GaN/sapphire) material system. The band edge luminescence energy of the nano-LEDs could be engineered by tuning the composition and size of the InGaN mesoscopic structures. Narrow band edge photoluminescence and electroluminescence were observed. Our mesoscopic InGaN structures (depending on diameter) feature a very low power consumption in the range between 2 nWand 30 nW. The suitability of the technological process for the long-term operation of LEDs is demonstrated by reliability measurements. The optical and electrical characterization presented show strong potential for future low energy consumption optoelectronics.
Disciplines :
Physics
Author, co-author :
Mikulics, Martin; Peter Grünberg Institute (PGI-9) Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany, and Jülich Aachen Research Alliance, JARA, Fundamentals of Future Information Technology, D-52425 Jülich, Germany
Marso, Michel ; University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Engineering Research Unit
Moonshiram, Anusha ; University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Engineering Research Unit
Lüth, Hans; Peter Grünberg Institute (PGI-9) Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany, and Jülich Aachen Research Alliance, JARA, Fundamentals of Future Information Technology, D-52425 Jülich, Germany
Grützmacher, Detlev; Peter Grünberg Institute (PGI-9) Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany, and Jülich Aachen Research Alliance, JARA, Fundamentals of Future Information Technology, D-52425 Jülich, Germany
Hardtdegen, Hilde; Peter Grünberg Institute (PGI-9) Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany, and Jülich Aachen Research Alliance, JARA, Fundamentals of Future Information Technology, D-52425 Jülich, Germany
External co-authors :
yes
Language :
English
Title :
Nano-light-emitting-diodes based on InGaN mesoscopic structures for energy saving optoelectronics
Publication date :
July 2016
Journal title :
Applied Physics Letters
ISSN :
1077-3118
Publisher :
American Institute of Physics, Melville, United States - New York