Reference : Nano-light-emitting-diodes based on InGaN mesoscopic structures for energy saving opt...

	Document type :	Scientific journals : Article
	Discipline(s) :	Physical, chemical, mathematical & earth Sciences : Physics
	Focus Areas :	Physics and Materials Science
	To cite this reference:	http://hdl.handle.net/10993/28063

Title :	Nano-light-emitting-diodes based on InGaN mesoscopic structures for energy saving optoelectronics
Language :	English
Author, co-author :	Mikulics, Martin [Peter Grünberg Institute (PGI-9) Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany, and Jülich Aachen Research Alliance, JARA, Fundamentals of Future Information Technology, D-52425 Jülich, Germany]
	Winden, Andreas [3Robert Bosch GmbH, D-72760 Reutlingen, Germany]
	Marso, Michel [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Engineering Research Unit >]
	Moonshiram, Anusha [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Engineering Research Unit >]
	Lüth, Hans [Peter Grünberg Institute (PGI-9) Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany, and Jülich Aachen Research Alliance, JARA, Fundamentals of Future Information Technology, D-52425 Jülich, Germany]
	Grützmacher, Detlev [Peter Grünberg Institute (PGI-9) Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany, and Jülich Aachen Research Alliance, JARA, Fundamentals of Future Information Technology, D-52425 Jülich, Germany]
	Hardtdegen, Hilde [Peter Grünberg Institute (PGI-9) Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany, and Jülich Aachen Research Alliance, JARA, Fundamentals of Future Information Technology, D-52425 Jülich, Germany]
Publication date :	Jul-2016
Journal title :	Applied Physics Letters
Publisher :	American Institute of Physics
Volume :	109
Pages :	041103
Peer reviewed :	Yes (verified by ORBilu)
Audience :	International
ISSN :	0003-6951
e-ISSN :	1077-3118
City :	Melville
Country :	NY
Keywords :	[en] Light emitting diode ; nano-LED ; InGaN
Abstract :	[en] Vertically integrated III-nitride based nano-LEDs (light emitting diodes) were designed and fabricated for operation in the telecommunication wavelength range in the (p-GaN/InGaN/n-GaN/sapphire) material system. The band edge luminescence energy of the nano-LEDs could be engineered by tuning the composition and size of the InGaN mesoscopic structures. Narrow band edge photoluminescence and electroluminescence were observed. Our mesoscopic InGaN structures (depending on diameter) feature a very low power consumption in the range between 2 nWand 30 nW. The suitability of the technological process for the long-term operation of LEDs is demonstrated by reliability measurements. The optical and electrical characterization presented show strong potential for future low energy consumption optoelectronics.
Permalink :	http://hdl.handle.net/10993/28063
DOI :	10.1063/1.4960007

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