Reference : Vapour phase alkali species for Cu(In,Ga)Se2 solar cells

	Document type :	Scientific congresses, symposiums and conference proceedings : Unpublished conference
	Discipline(s) :	Physical, chemical, mathematical & earth Sciences : Multidisciplinary, general & others
	To cite this reference:	http://hdl.handle.net/10993/24659

Title :	Vapour phase alkali species for Cu(In,Ga)Se2 solar cells
Language :	English
Author, co-author :	Berner, Ulrich [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit]
	Colombara, Diego [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
	Bertram, Tobias [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
	Malaquias, Joao Corujo Branco [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
	Meadows, Helen [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
	Valle, Nathalie [Luxembourg Institute of Science & Technology - LIST]
	Widenmeyer, Markus [Bosch]
	Dale, Phillip [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
Publication date :	Sep-2015
Reviewed work :	https://www.photovoltaic-conference.com/images/stories/2015/2_conference/programme/EUPVSEC2015_10-09-2015_Programme.pdf
Peer reviewed :	Yes
Event name :	31st European Photovoltaic Solar Energy and Conversion
Event date :	14th to 19th September 2015
Event place (city) :	Hamburg
Event country :	Germany
Keywords :	[en] Alkali vapor ; Cu(In,Ga)Se2 ; thin film solar cells ; Na K ; photovoltaics
Abstract :	[en] Alkalis are essential in Cu(In,Ga)Se2 absorber layers for efficient solar cells. Current doping methods rely on solid state diffusion of an alkali through to the absorber layer, e.g. a thin NaF layer on Mo or NaCl dissolved in a metal precursor ink[1]. The apparent concentration of alkali in the final absorber is determined by the initial alkali dosing and the use of an interfacial barrier to stop alkali diffusion from the substrate. Until now the vapor–absorber interface as a source or sink of alkali doping has been largely ignored. We show that device efficiency improves from 2 to 8% by gas phase Na adsorption alone. Conversely initial results show that Na can also be desorbed to the gas phase. Although these efficiencies are lower than those obtained by including Na directly in the precursor (device efficiency 13.3% [1]), the findings are relevant to all chalcogenide growers as they show that exact doping, and thus control of device efficiency, is only possible when gas phase adsorption/desorption processes are controlled.
Target :	Researchers
Permalink :	http://hdl.handle.net/10993/24659
Framework Programme / European Project :	FP7 ; 284486 - SCALENANO - Development and scale-up of nanostructured based materials and processes for low cost high efficiency chalcogenide based photovoltaics
FnR project :	FnR ; FNR3931997 > Phillip Dale > LASER > Laser Annealing of Semiconductor Electrodeposited Reactants > 15/10/2010 > 14/10/2013 > 2010

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