Reference : Vapour phase alkali species for Cu(In,Ga)Se2 solar cells
Scientific congresses, symposiums and conference proceedings : Unpublished conference
Physical, chemical, mathematical & earth Sciences : Multidisciplinary, general & others
http://hdl.handle.net/10993/24659
Vapour phase alkali species for Cu(In,Ga)Se2 solar cells
English
Berner, Ulrich [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit]
Colombara, Diego mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
Bertram, Tobias mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
Malaquias, Joao Corujo Branco mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
Meadows, Helen mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
Valle, Nathalie [Luxembourg Institute of Science & Technology - LIST]
Widenmeyer, Markus [Bosch]
Dale, Phillip mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
Sep-2015
https://www.photovoltaic-conference.com/images/stories/2015/2_conference/programme/EUPVSEC2015_10-09-2015_Programme.pdf
Yes
31st European Photovoltaic Solar Energy and Conversion
14th to 19th September 2015
Hamburg
Germany
[en] Alkali vapor ; Cu(In,Ga)Se2 ; thin film solar cells ; Na K ; photovoltaics
[en] Alkalis are essential in Cu(In,Ga)Se2 absorber layers for efficient solar cells. Current doping
methods rely on solid state diffusion of an alkali through to the absorber layer, e.g. a thin NaF layer
on Mo or NaCl dissolved in a metal precursor ink[1]. The apparent concentration of alkali in the
final absorber is determined by the initial alkali dosing and the use of an interfacial barrier to stop
alkali diffusion from the substrate. Until now the vapor–absorber interface as a source or sink of
alkali doping has been largely ignored. We show that device efficiency improves from 2 to 8% by
gas phase Na adsorption alone. Conversely initial results show that Na can also be desorbed to
the gas phase. Although these efficiencies are lower than those obtained by including Na directly
in the precursor (device efficiency 13.3% [1]), the findings are relevant to all chalcogenide growers
as they show that exact doping, and thus control of device efficiency, is only possible when gas
phase adsorption/desorption processes are controlled.
Researchers
http://hdl.handle.net/10993/24659
FP7 ; 284486 - SCALENANO - Development and scale-up of nanostructured based materials and processes for low cost high efficiency chalcogenide based photovoltaics
FnR ; FNR3931997 > Phillip Dale > LASER > Laser Annealing of Semiconductor Electrodeposited Reactants > 15/10/2010 > 14/10/2013 > 2010

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