Prediction of Photovoltaic Cu(In,Ga)Se2 p-n Device Performance by forward Bias Electrochemical Analysis of Only the p-Type Cu(In,Ga)Se2 Films
English
Colombara, Diego[University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
Bertram, Tobias[University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
Depredurand, Valérie[University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
Semiconductor Electrochemistry – Etching, Interfaces and Devices
19-25
Yes
227th Meeting
24-28 May 2015
Electrochemical Society
Chicago (IL)
USA
[en] Process monitoring ; Electrochemistry ; Photoelectrochemistry ; Semiconductor ; Solar cell ; Photovoltaics ; CIGS ; Chalcopyrite ; Europium
[en] This work is an attempt to rate the quality of Mo/Cu(In,Ga)Se2 films intended for fabrication of photovoltaic devices. The procedure is based on the simple current-voltage electrochemical analysis of the bilayer in a Eu2+/3+-containing electrolyte solution. Two series of bilayer samples were tested electrochemically, while sister samples were completed into Mo/Cu(In,Ga)Se2/CdS/i-ZnO/Al:ZnO/Ni-Al solid state devices and their current-voltage characteristics measured in the dark. A correlation was found between the reverse saturation current density of the solid state devices and an analogous parameter extracted from the electrochemical response in forward bias. While Eu2+ was found to be metastable in water posing restrictions to the application, reproducible measurements were achieved with a methanol-based solution. The intrinsic simplicity of the proposed methodology makes it particularly suitable for the implementation of a low-cost diagnostic tool.
FP7 ; 284486 - SCALENANO - Development and scale-up of nanostructured based materials and processes for low cost high efficiency chalcogenide based photovoltaics