GaInAs camel diodes grown by MBE

Reference : GaInAs camel diodes grown by MBE


	Document type :	Scientific congresses, symposiums and conference proceedings : Paper published in a journal
	Discipline(s) :	Engineering, computing & technology : Electrical & electronics engineering
	To cite this reference:	http://hdl.handle.net/10993/20765

Title :	GaInAs camel diodes grown by MBE
Language :	English
Author, co-author :	Marso, Michel [Institut für Halbleitertechnik, Sommerfeldstraße, D-5100 Aachen, Germany]
	Chin, A. [> >]
	Bhattacharya, P. [> >]
	Beneking, H. [Institut für Halbleitertechnik, Sommerfeldstraße, D-5100 Aachen, Germany]
Publication date :	1988
Journal title :	Proceedings of the 18th European Solid State Device Research Conference (ESSDERC 88), Montpellier, France, 1988, J. de Physique, Colloque C4, suppl. 9
Pages :	C4-717-C4-720
Peer reviewed :	No
Event name :	18th European Solid State Device Research Conference (ESSDERC 88)
Event date :	1988
Permalink :	http://hdl.handle.net/10993/20765

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