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GaInAs camel diodes grown by MBE
Marso, Michel; Chin, A.; Bhattacharya, P. et al.
1988In Proceedings of the 18th European Solid State Device Research Conference (ESSDERC 88), Montpellier, France, 1988, J. de Physique, Colloque C4, suppl. 9, p. 4-717-C4-720
 

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Disciplines :
Electrical & electronics engineering
Identifiers :
UNILU:UL-CONFERENCE-2009-382
Author, co-author :
Marso, Michel ;  Institut für Halbleitertechnik, Sommerfeldstraße, D-5100 Aachen, Germany
Chin, A.
Bhattacharya, P.
Beneking, H.;  Institut für Halbleitertechnik, Sommerfeldstraße, D-5100 Aachen, Germany
External co-authors :
yes
Language :
English
Title :
GaInAs camel diodes grown by MBE
Publication date :
1988
Event name :
18th European Solid State Device Research Conference (ESSDERC 88)
Event date :
1988
Journal title :
Proceedings of the 18th European Solid State Device Research Conference (ESSDERC 88), Montpellier, France, 1988, J. de Physique, Colloque C4, suppl. 9
Pages :
C4-717-C4-720
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