GaInAs Camel transistors With Current Gain Above 6 at Room Temperature

MARSO, Michel; Zwinge, G.; Grützmacher, D.; Hergeth, J.; Beneking, H.

doi:10.1049/el:19910212

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Article (Scientific journals)

GaInAs Camel transistors With Current Gain Above 6 at Room Temperature

MARSO, Michel; Zwinge, G.; Grützmacher, D. et al.

1991 • In Electronics Letters, 27 (1991), p. 335-337

Peer reviewed

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https://hdl.handle.net/10993/20762

DOI
10.1049/el:19910212

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Disciplines :

Electrical & electronics engineering

Identifiers :

UNILU:UL-ARTICLE-2009-324

Author, co-author :

MARSO, Michel ; nstitut für Halbleitertechnik, Sommerfeldstraße, D-5100 Aachen, Germany

Zwinge, G.; nstitut für Halbleitertechnik, Sommerfeldstraße, D-5100 Aachen, Germany

Grützmacher, D.; nstitut für Halbleitertechnik, Sommerfeldstraße, D-5100 Aachen, Germany

Hergeth, J.; nstitut für Halbleitertechnik, Sommerfeldstraße, D-5100 Aachen, Germany

Beneking, H.; nstitut für Halbleitertechnik, Sommerfeldstraße, D-5100 Aachen, Germany

External co-authors :

yes

Language :

English

Title :

GaInAs Camel transistors With Current Gain Above 6 at Room Temperature

Publication date :

1991

Journal title :

Electronics Letters

ISSN :

0013-5194

Publisher :

Institution of Engineering & Technology

Volume :

Issue :

1991

Pages :

335-337

Peer reviewed :

Peer reviewed

Available on ORBilu :

since 06 April 2015

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