GaInAs Camel transistors With Current Gain Above 6 at Room Temperature

Reference : GaInAs Camel transistors With Current Gain Above 6 at Room Temperature


	Document type :	Scientific journals : Article
	Discipline(s) :	Engineering, computing & technology : Electrical & electronics engineering
	To cite this reference:	http://hdl.handle.net/10993/20762

Title :	GaInAs Camel transistors With Current Gain Above 6 at Room Temperature
Language :	English
Author, co-author :	Marso, Michel [nstitut für Halbleitertechnik, Sommerfeldstraße, D-5100 Aachen, Germany]
	Zwinge, G. [nstitut für Halbleitertechnik, Sommerfeldstraße, D-5100 Aachen, Germany]
	Grützmacher, D. [nstitut für Halbleitertechnik, Sommerfeldstraße, D-5100 Aachen, Germany]
	Hergeth, J. [nstitut für Halbleitertechnik, Sommerfeldstraße, D-5100 Aachen, Germany]
	Beneking, H. [nstitut für Halbleitertechnik, Sommerfeldstraße, D-5100 Aachen, Germany]
Publication date :	1991
Journal title :	Electronics Letters
Publisher :	Institution of Engineering & Technology
Volume :	27
Issue/season :	1991
Pages :	335-337
Peer reviewed :	Yes (verified by ORBi^lu)
ISSN :	0013-5194
Permalink :	http://hdl.handle.net/10993/20762

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