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Quasi-Schottky Diodes on (n)In.53Ga.47As With Barrier Heights of 0.6eV
Marso, Michel; Kordoš, P.; Meyer, R. et al.
1991In Proceedings of the the MRS Fall Meeting, Symposium E, Boston, MA, USA
 

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Disciplines :
Electrical & electronics engineering
Identifiers :
UNILU:UL-CONFERENCE-2009-417
Author, co-author :
Marso, Michel ;  University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Engineering Research Unit ; Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, W-5170 Jülich, Germany
Kordoš, P.;  Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, W-5170 Jülich, Germany
Meyer, R.;  Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, W-5170 Jülich, Germany
Lüth, H.;  Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, W-5170 Jülich, Germany
External co-authors :
yes
Language :
English
Title :
Quasi-Schottky Diodes on (n)In.53Ga.47As With Barrier Heights of 0.6eV
Publication date :
1991
Event name :
MRS Fall Meeting, Symposium E, Boston, MA, USA
Event date :
1991
Main work title :
Proceedings of the the MRS Fall Meeting, Symposium E, Boston, MA, USA
Pages :
449-454
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since 06 April 2015

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