Enhancement of the Schottky Barrier Height on n-InGaAs by Thin InP Interlayers

Reference : Enhancement of the Schottky Barrier Height on n-InGaAs by Thin InP Interlayers


	Document type :	Scientific journals : Article
	Discipline(s) :	Engineering, computing & technology : Electrical & electronics engineering
	To cite this reference:	http://hdl.handle.net/10993/20760

Title :	Enhancement of the Schottky Barrier Height on n-InGaAs by Thin InP Interlayers
Language :	English
Author, co-author :	Kordoš, P. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, W-5170 Jülich, Germany]
	Marso, Michel [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, W-5170 Jülich, Germany]
	Lüth, H. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, W-5170 Jülich, Germany]
Publication date :	1992
Journal title :	Journal of Electrical Engineering
Publisher :	Slovak Technical University. Faculty of Electrical Engineering and Information Technology
Volume :	44
Issue/season :	1992
Pages :	367-371
Peer reviewed :	Yes (verified by ORBi^lu)
ISSN :	1335-3632
e-ISSN :	0013-578X
City :	Bratislava
Country :	Slovakia
Permalink :	http://hdl.handle.net/10993/20760

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