Enhancement of the Schottky Barrier Height on n-InGaAs by Thin InP Interlayers

Kordoš, P.; Marso, Michel; Lüth, H.

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Enhancement of the Schottky Barrier Height on n-InGaAs by Thin InP Interlayers

Kordoš, P.; Marso, Michel; Lüth, H.

1992 • In Journal of Electrical Engineering, 44 (1992), p. 367-371

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Disciplines :

Electrical & electronics engineering

Identifiers :

UNILU:UL-ARTICLE-2009-316

Author, co-author :

Kordoš, P.; Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, W-5170 Jülich, Germany

Marso, Michel ; Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, W-5170 Jülich, Germany

Lüth, H.; Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, W-5170 Jülich, Germany

External co-authors :

yes

Language :

English

Title :

Enhancement of the Schottky Barrier Height on n-InGaAs by Thin InP Interlayers

Publication date :

1992

Journal title :

Journal of Electrical Engineering

ISSN :

0013-578X

Publisher :

Slovak Technical University. Faculty of Electrical Engineering and Information Technology, Bratislava, Slovakia

Volume :

Issue :

1992

Pages :

367-371

Peer reviewed :

Peer Reviewed verified by ORBi

Available on ORBilu :

since 06 April 2015

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