Schottky Barrier Height Enhancement on n-In0.53Ga0.47As

Kordoš, P.; Marso, Michel; Meyer, R.; Lüth, H.

doi:10.1063/1.351576

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Article (Scientific journals)

Schottky Barrier Height Enhancement on n-In0.53Ga0.47As

Kordoš, P.; Marso, Michel; Meyer, R. et al.

1992 • In Journal of Applied Physics, 72 (1992), p. 2347-2355

Peer reviewed

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https://hdl.handle.net/10993/20759

DOI
10.1063/1.351576

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Disciplines :

Electrical & electronics engineering

Identifiers :

UNILU:UL-ARTICLE-2009-367

Author, co-author :

Kordoš, P.; Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, W-5170 Jülich, Germany

Marso, Michel ; Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, W-5170 Jülich, Germany

Meyer, R.; Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, W-5170 Jülich, Germany

Lüth, H.; Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, W-5170 Jülich, Germany

External co-authors :

yes

Language :

English

Title :

Schottky Barrier Height Enhancement on n-In0.53Ga0.47As

Publication date :

1992

Journal title :

Journal of Applied Physics

ISSN :

0021-8979

Publisher :

American Institute of Physics, Melville, United States - New York

Volume :

Issue :

1992

Pages :

2347-2355

Peer reviewed :

Peer reviewed

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since 06 April 2015

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