Enhanced Schottky Barriers on n-In.53Ga.47As Using pInGaAs, GaAs, InP and InGaP Surface layers

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Kordoš, P.; MARSO, Michel; Meyer, R. et al.

1992 • In Proceedings of the 4th International Conference on InP and Related Compounds, Newport, Rhode Island, USA

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https://hdl.handle.net/10993/20758

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Disciplines :

Electrical & electronics engineering

Identifiers :

UNILU:UL-CONFERENCE-2009-378

Author, co-author :

Kordoš, P.; Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, W-5170 Jülich, Germany

MARSO, Michel ; Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, W-5170 Jülich, Germany

Meyer, R.; Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, W-5170 Jülich, Germany

Lüth, H.; Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, W-5170 Jülich, Germany

External co-authors :

yes

Language :

English

Title :

Enhanced Schottky Barriers on n-In.53Ga.47As Using pInGaAs, GaAs, InP and InGaP Surface layers

Publication date :

1992

Event name :

4th International Conference on InP and Related Compounds, Newport, Rhode Island, USA

Event date :

1992

Main work title :

Proceedings of the 4th International Conference on InP and Related Compounds, Newport, Rhode Island, USA

Pages :

230-233

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since 06 April 2015

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