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Enhanced Schottky Barriers on n-In.53Ga.47As Using pInGaAs, GaAs, InP and InGaP Surface layers
Kordoš, P.; Marso, Michel; Meyer, R. et al.
1992In Proceedings of the 4th International Conference on InP and Related Compounds, Newport, Rhode Island, USA
 

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Disciplines :
Electrical & electronics engineering
Identifiers :
UNILU:UL-CONFERENCE-2009-378
Author, co-author :
Kordoš, P.;  Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, W-5170 Jülich, Germany
Marso, Michel ;  Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, W-5170 Jülich, Germany
Meyer, R.;  Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, W-5170 Jülich, Germany
Lüth, H.;  Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, W-5170 Jülich, Germany
External co-authors :
yes
Language :
English
Title :
Enhanced Schottky Barriers on n-In.53Ga.47As Using pInGaAs, GaAs, InP and InGaP Surface layers
Publication date :
1992
Event name :
4th International Conference on InP and Related Compounds, Newport, Rhode Island, USA
Event date :
1992
Main work title :
Proceedings of the 4th International Conference on InP and Related Compounds, Newport, Rhode Island, USA
Pages :
230-233
Available on ORBilu :
since 06 April 2015

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