Schottky Contacts on n-In0.53Ga0.47As with Enhanced Barriers by Counter-Doped Interfacial Layers,

Kordoš, P.; Marso, Michel; Meyer, R.; Lüth, H.

doi:10.1109/16.144693

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Article (Scientific journals)

Schottky Contacts on n-In0.53Ga0.47As with Enhanced Barriers by Counter-Doped Interfacial Layers,

Kordoš, P.; Marso, Michel; Meyer, R. et al.

1992 • In IEEE Transactions on Electron Devices, 39 (1992), p. 1970-1972

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https://hdl.handle.net/10993/20757

DOI
10.1109/16.144693

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Disciplines :

Electrical & electronics engineering

Identifiers :

UNILU:UL-ARTICLE-2009-369

Author, co-author :

Kordoš, P.; Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, W-5170 Jülich, Germany

Marso, Michel ; Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, W-5170 Jülich, Germany

Meyer, R.; Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, W-5170 Jülich, Germany

Lüth, H.; Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, W-5170 Jülich, Germany

External co-authors :

yes

Language :

English

Title :

Schottky Contacts on n-In0.53Ga0.47As with Enhanced Barriers by Counter-Doped Interfacial Layers,

Publication date :

1992

Journal title :

IEEE Transactions on Electron Devices

ISSN :

0018-9383

Publisher :

IEEE

Volume :

Issue :

1992

Pages :

1970-1972

Peer reviewed :

Peer Reviewed verified by ORBi

Available on ORBilu :

since 06 April 2015

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