Schottky Contacts on n-In0.53Ga0.47As with Enhanced Barriers by Counter-Doped Interfacial Layers,

Reference : Schottky Contacts on n-In0.53Ga0.47As with Enhanced Barriers by Counter-Doped Interfa...


	Document type :	Scientific journals : Article
	Discipline(s) :	Engineering, computing & technology : Electrical & electronics engineering
	To cite this reference:	http://hdl.handle.net/10993/20757

Title :	Schottky Contacts on n-In0.53Ga0.47As with Enhanced Barriers by Counter-Doped Interfacial Layers,
Language :	English
Author, co-author :	Kordoš, P. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, W-5170 Jülich, Germany]
	Marso, Michel [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, W-5170 Jülich, Germany]
	Meyer, R. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, W-5170 Jülich, Germany]
	Lüth, H. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, W-5170 Jülich, Germany]
Publication date :	1992
Journal title :	IEEE Transactions on Electron Devices
Publisher :	IEEE
Volume :	39
Issue/season :	1992
Pages :	1970-1972
Peer reviewed :	Yes (verified by ORBi^lu)
ISSN :	0018-9383
Permalink :	http://hdl.handle.net/10993/20757

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