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Optimization of Strained Ga1-xInxAs/InP Heterostructures Towards High Channel Conductivity for HEMT Application
Meyer, R.; Hardtdegen, H.; Leuther, A. et al.
1993In Proceedings of the 5th International Conference on InP and Related Compounds, Paris, France
 

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Disciplines :
Electrical & electronics engineering
Identifiers :
UNILU:UL-CONFERENCE-2009-413
Author, co-author :
Meyer, R.;  Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, W-5170 Jülich, Germany
Hardtdegen, H.;  Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, W-5170 Jülich, Germany
Leuther, A.;  Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, W-5170 Jülich, Germany
Marso, Michel ;  Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, W-5170 Jülich, Germany
Kordoš, P.;  Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, W-5170 Jülich, Germany
Lüth, H.;  Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, W-5170 Jülich, Germany
External co-authors :
yes
Language :
English
Title :
Optimization of Strained Ga1-xInxAs/InP Heterostructures Towards High Channel Conductivity for HEMT Application
Publication date :
1993
Event name :
5th International Conference on InP and Related Compounds, Paris, France
Event date :
1993
Main work title :
Proceedings of the 5th International Conference on InP and Related Compounds, Paris, France
Pages :
485-488
Available on ORBilu :
since 06 April 2015

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