Optimization of Strained Ga1-xInxAs/InP Heterostructures Towards High Channel Conductivity for HEMT Application

Reference : Optimization of Strained Ga1-xInxAs/InP Heterostructures Towards High Channel Conduct...


	Document type :	Scientific congresses, symposiums and conference proceedings : Paper published in a book
	Discipline(s) :	Engineering, computing & technology : Electrical & electronics engineering
	To cite this reference:	http://hdl.handle.net/10993/20755

Title :	Optimization of Strained Ga1-xInxAs/InP Heterostructures Towards High Channel Conductivity for HEMT Application
Language :	English
Author, co-author :	Meyer, R. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, W-5170 Jülich, Germany]
	Hardtdegen, H. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, W-5170 Jülich, Germany]
	Leuther, A. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, W-5170 Jülich, Germany]
	Marso, Michel [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, W-5170 Jülich, Germany]
	Kordoš, P. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, W-5170 Jülich, Germany]
	Lüth, H. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, W-5170 Jülich, Germany]
Publication date :	1993
Main document title :	Proceedings of the 5th International Conference on InP and Related Compounds, Paris, France
Pages :	485-488
Peer reviewed :	No
Event name :	5th International Conference on InP and Related Compounds, Paris, France
Event date :	1993
Permalink :	http://hdl.handle.net/10993/20755

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