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Article (Scientific journals)
Schottky Barriers and Ohmic Contacts on InGaAs, Properties of Lattice-matched and strained InGaAs
Kordoš, P.
;
MARSO, Michel
1993
•
In
EMS Datareviews
, (INSPEC IEE London), p. 131-155
Peer reviewed
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https://hdl.handle.net/10993/20752
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Disciplines :
Electrical & electronics engineering
Identifiers :
UNILU:UL-ARTICLE-2009-368
Author, co-author :
Kordoš, P.;
Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
MARSO, Michel
;
Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
External co-authors :
yes
Language :
English
Title :
Schottky Barriers and Ohmic Contacts on InGaAs, Properties of Lattice-matched and strained InGaAs
Publication date :
1993
Journal title :
EMS Datareviews
Issue :
INSPEC IEE London
Pages :
131-155
Peer reviewed :
Peer reviewed
Available on ORBilu :
since 06 April 2015
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