Schottky Barriers and Ohmic Contacts on InGaAs, Properties of Lattice-matched and strained InGaAs

Reference : Schottky Barriers and Ohmic Contacts on InGaAs, Properties of Lattice-matched and str...


	Document type :	Scientific journals : Article
	Discipline(s) :	Engineering, computing & technology : Electrical & electronics engineering
	To cite this reference:	http://hdl.handle.net/10993/20752

Title :	Schottky Barriers and Ohmic Contacts on InGaAs, Properties of Lattice-matched and strained InGaAs
Language :	English
Author, co-author :	Kordoš, P. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany]
	Marso, Michel [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany]
Publication date :	1993
Journal title :	EMS Datareviews
Issue/season :	INSPEC IEE London
Pages :	131-155
Peer reviewed :	Yes
Permalink :	http://hdl.handle.net/10993/20752

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