Schottky Barriers and Ohmic Contacts on InGaAs, Properties of Lattice-matched and strained InGaAs

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Article (Scientific journals)

Kordoš, P.; Marso, Michel

1993 • In EMS Datareviews, (INSPEC IEE London), p. 131-155

Peer reviewed

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https://hdl.handle.net/10993/20752

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Disciplines :

Electrical & electronics engineering

Identifiers :

UNILU:UL-ARTICLE-2009-368

Author, co-author :

Kordoš, P.; Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany

Marso, Michel ; Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany

External co-authors :

yes

Language :

English

Title :

Schottky Barriers and Ohmic Contacts on InGaAs, Properties of Lattice-matched and strained InGaAs

Publication date :

1993

Journal title :

EMS Datareviews

Issue :

INSPEC IEE London

Pages :

131-155

Peer reviewed :

Peer reviewed

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since 06 April 2015

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