Article (Scientific journals)
Overgrown PBT's: Calculations and Measurements
Schüppen, A.; Marso, Michel; Lüth, H.
1994In IEEE Transactions on Electron Devices, 41 (1994), p. 751-760
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Abstract :
[en] The device parameters of overgrown silicon permeable base transistors (PBT’s) have been systematically investigated by two dimensional drift diffusion simulations and analytical calculations. Hence some design rules arise for optimizing the high frequency performance of PBT’s. The calculations indicate the source-drain distance as the essential PBT parameter, which should be kept below 200 nm in order to expect unity current- gain frequencies fT over 50 GHz. In addition, PBT’s with buried monocrystalline CoSiz -gates have been fabricated by high dose cobalt ion implantation through a grid-like mask into MOS-compatible n -type Si(lO0). Measurements revealed a transconductance of 70 mS/mm and a fT value of 6 GHz. The comparison between measured and simulated output characteristics shows good agreement.
Disciplines :
Electrical & electronics engineering
Identifiers :
UNILU:UL-ARTICLE-2009-357
Author, co-author :
Schüppen, A.;  Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
Marso, Michel ;  Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
Lüth, H.;  Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
External co-authors :
yes
Language :
English
Title :
Overgrown PBT's: Calculations and Measurements
Publication date :
1994
Journal title :
IEEE Transactions on Electron Devices
ISSN :
0018-9383
Publisher :
IEEE
Volume :
41
Issue :
1994
Pages :
751-760
Peer reviewed :
Peer Reviewed verified by ORBi
Available on ORBilu :
since 05 April 2015

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