0.2µm T-gate InP/InGaAs/InP pHEMT with an InGaP Diffusion Barrier Layer Grown By LP-MOCVD Using an N2-carrier

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Schimpf, K.; Hollfelder, M.; Horstmann, M. et al.

1996 • In Proceedings of the 26th European Solid State Devices Research Conference, Bologna, Italy, 1996

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https://hdl.handle.net/10993/20718

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Disciplines :

Electrical & electronics engineering

Author, co-author :

Schimpf, K.; Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany

Hollfelder, M.; Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany

Horstmann, M.; Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany

MARSO, Michel ; Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany

Hardtdegen; Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany

Kordos, P.; Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany

External co-authors :

yes

Language :

English

Title :

0.2µm T-gate InP/InGaAs/InP pHEMT with an InGaP Diffusion Barrier Layer Grown By LP-MOCVD Using an N2-carrier

Publication date :

1996

Event name :

26th European Solid State Devices Research Conference, Bologna, Italy, 1996

Event date :

1996

Main work title :

Proceedings of the 26th European Solid State Devices Research Conference, Bologna, Italy, 1996

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