InP/GaInAs MSM Photodetector for Simple Integration in HEMT Circuits

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Horstmann, M.; Marso, Michel; Schimpf, K. et al.

1996 • Kluver Academic Publishers

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https://hdl.handle.net/10993/20717

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Disciplines :

Electrical & electronics engineering

Identifiers :

UNILU:UL-BOOK-2009-050

Author, co-author :

Horstmann, M.; Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany

Marso, Michel ; Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany

Schimpf, K.; Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany

Hardtdegen, H.; Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany

Hollfelder, M.; Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany

Kordoš, P.; Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany

Novak, J.; Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany

External co-authors :

yes

Language :

English

Title :

InP/GaInAs MSM Photodetector for Simple Integration in HEMT Circuits

Publication date :

1996

Publisher :

Kluver Academic Publishers

Number of pages :

305 - 308

Collection name :

Heterostructure Epitaxy and Devices

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