Thermionic emission; High electron mobility transistors
Abstract :
[en] A model for thermionic field emission in p-barrier enhanced InP HEMTs is presented indicating that a reduction in the gate leakage of those devices is related to an increase in effective barrier thickness. Good agreement between this model and our experimental data is obtained.
Disciplines :
Electrical & electronics engineering
Identifiers :
UNILU:UL-ARTICLE-2009-378
Author, co-author :
Schimpf, K.; Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany
Horstmann, M.; Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany
Hardtdegen, H.; Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany
Marso, Michel ; Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany
Kordoš, P.; Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany
External co-authors :
yes
Language :
English
Title :
Thermionic Field Emission in p-Barrier enhanced InP/InGaAs/InP HEMTs
