Thermionic Field Emission in p-Barrier enhanced InP/InGaAs/InP HEMTs

Reference : Thermionic Field Emission in p-Barrier enhanced InP/InGaAs/InP HEMTs


	Document type :	Scientific journals : Article
	Discipline(s) :	Engineering, computing & technology : Electrical & electronics engineering
	To cite this reference:	http://hdl.handle.net/10993/20701

Title :	Thermionic Field Emission in p-Barrier enhanced InP/InGaAs/InP HEMTs
Language :	English
Author, co-author :	Schimpf, K. [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany]
	Horstmann, M. [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany]
	Hardtdegen, H. [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany]
	Marso, Michel [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany]
	Kordoš, P. [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany]
Publication date :	1996
Journal title :	Electronics Letters
Publisher :	Institution of Engineering & Technology
Volume :	32
Issue/season :	1996
Pages :	2132-2133
Peer reviewed :	Yes (verified by ORBi^lu)
ISSN :	0013-5194
Keywords :	[en] Thermionic emission ; High electron mobility transistors
Abstract :	[en] A model for thermionic field emission in p-barrier enhanced InP HEMTs is presented indicating that a reduction in the gate leakage of those devices is related to an increase in effective barrier thickness. Good agreement between this model and our experimental data is obtained.
Permalink :	http://hdl.handle.net/10993/20701

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