16 GHz Bandwidth MSM Photodetector and 45/85 GHz fT/fmax HEMT Prepared on an Identical InGaAs/InP Layer Structure

Reference : 16 GHz Bandwidth MSM Photodetector and 45/85 GHz fT/fmax HEMT Prepared on an Identica...


	Document type :	Scientific journals : Article
	Discipline(s) :	Engineering, computing & technology : Electrical & electronics engineering
	To cite this reference:	http://hdl.handle.net/10993/20699

Title :	16 GHz Bandwidth MSM Photodetector and 45/85 GHz fT/fmax HEMT Prepared on an Identical InGaAs/InP Layer Structure
Language :	English
Author, co-author :	Horstmann, M. [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany]
	Schimpf, K. [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany]
	Marso, Michel [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany]
	Fox, A. [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany]
	Kordoš, P. [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany]
Publication date :	1996
Journal title :	Electronics Letters
Publisher :	Institution of Engineering & Technology
Volume :	32
Pages :	763-764
Peer reviewed :	Yes (verified by ORBi^lu)
ISSN :	0013-5194
Permalink :	http://hdl.handle.net/10993/20699

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