Article (Scientific journals)
16 GHz Bandwidth MSM Photodetector and 45/85 GHz fT/fmax HEMT Prepared on an Identical InGaAs/InP Layer Structure
Horstmann, M.; Schimpf, K.; Marso, Michel et al.
1996In Electronics Letters, 32, p. 763-764
Peer reviewed
 

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Disciplines :
Electrical & electronics engineering
Identifiers :
UNILU:UL-ARTICLE-2009-290
Author, co-author :
Horstmann, M.;  Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany
Schimpf, K.;  Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany
Marso, Michel ;  Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany
Fox, A.;  Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany
Kordoš, P.;  Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany
External co-authors :
yes
Language :
English
Title :
16 GHz Bandwidth MSM Photodetector and 45/85 GHz fT/fmax HEMT Prepared on an Identical InGaAs/InP Layer Structure
Publication date :
1996
Journal title :
Electronics Letters
ISSN :
0013-5194
Publisher :
Institution of Engineering & Technology
Volume :
32
Pages :
763-764
Peer reviewed :
Peer reviewed
Available on ORBilu :
since 31 March 2015

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