Reference : High Bandwidth InP/InGaAs Based MSM-2DEG Diodes For Optoelectronic Application, |
Scientific congresses, symposiums and conference proceedings : Paper published in a journal | |||
Engineering, computing & technology : Electrical & electronics engineering | |||
http://hdl.handle.net/10993/20698 | |||
High Bandwidth InP/InGaAs Based MSM-2DEG Diodes For Optoelectronic Application, | |
English | |
Marso, Michel ![]() | |
Horstmann, M. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany] | |
Schimpf, K. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany] | |
Muttersbach, J. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany] | |
Hardtdegen, H. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany] | |
Jacob, G. [InPACT, Pomblière, F-73600 Moûtiers] | |
Kordos, P. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany] | |
1997 | |
Proceedings of the 9th International Conference on InP and Related Materials | |
494-497 | |
No | |
9th International Conference on InP and Related Materials | |
1997 | |
http://hdl.handle.net/10993/20698 |
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