[en] Current transport in low-temperature (LT) molecular-beam epitaxial GaAs grown at 200-300 °C on an n+ GaAs substrate is studied by means of current–voltage–temperature characteristics. The resistivity of LT GaAs at low electric fields is rho>108 Ohm cm, much higher than resulting from van der Pauw measurements. It is found that the measured resistivity decreases with increasing the LT GaAs thickness. This is explained by space-charge effect in the vicinity of n+/LT GaAs junction and subsequent suppression of hopping conduction in the high-field junction region.
Disciplines :
Electrical & electronics engineering
Identifiers :
UNILU:UL-ARTICLE-2009-374
Author, co-author :
Kordoš, P.; Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany
Marso, Michel ; Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany
Förster, A.; Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany
Darmo, J.; Institute of Electrical Engineering, Slovak Academy of Sciences, SK-84239 Bratislava, Slovakia
Betko, J.; Institute of Electrical Engineering, Slovak Academy of Sciences, SK-84239 Bratislava, Slovakia
Nimtz, G.; II. Institute of Physics, University Köln, D-50937 Köln, Germany
External co-authors :
yes
Language :
English
Title :
Space-charge controlled conduction in low-temperature-grown molecular-beam epitaxial GaAs,
Publication date :
1997
Journal title :
Applied Physics Letters
ISSN :
0003-6951
Publisher :
American Institute of Physics, Melville, United States - New York
