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Article (Scientific journals)
Electrical Behaviour of the InP/InGaAs Based MSM-2DEG Diode
Marso, Michel; Horstmann, M.; Hardtdegen, H. et al.
1997 • In Solid-State Electronics, 41 (1997), p. 25-31
Peer Reviewed verified by ORBi
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https://hdl.handle.net/10993/20693
DOI
10.1016/S0038-1101(96)00138-4
 

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Disciplines :
Electrical & electronics engineering
Identifiers :
UNILU:UL-ARTICLE-2009-314
Author, co-author :
Marso, Michel ;  Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
Horstmann, M.;  Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
Hardtdegen, H.;  Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
Kordoš, P.;  Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
Lüth, H.;  Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
External co-authors :
yes
Language :
English
Title :
Electrical Behaviour of the InP/InGaAs Based MSM-2DEG Diode
Publication date :
1997
Journal title :
Solid-State Electronics
ISSN :
0038-1101
Publisher :
Pergamon Press - An Imprint of Elsevier Science
Volume :
41
Issue :
1997
Pages :
25-31
Peer reviewed :
Peer Reviewed verified by ORBi
Available on ORBilu :
since 31 March 2015

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