Electrical Behaviour of the InP/InGaAs Based MSM-2DEG Diode

Reference : Electrical Behaviour of the InP/InGaAs Based MSM-2DEG Diode


	Document type :	Scientific journals : Article
	Discipline(s) :	Engineering, computing & technology : Electrical & electronics engineering
	To cite this reference:	http://hdl.handle.net/10993/20693

Title :	Electrical Behaviour of the InP/InGaAs Based MSM-2DEG Diode
Language :	English
Author, co-author :	Marso, Michel [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany]
	Horstmann, M. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany]
	Hardtdegen, H. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany]
	Kordoš, P. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany]
	Lüth, H. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany]
Publication date :	1997
Journal title :	Solid-State Electronics
Publisher :	Pergamon Press - An Imprint of Elsevier Science
Volume :	41
Issue/season :	1997
Pages :	25-31
Peer reviewed :	Yes (verified by ORBi^lu)
ISSN :	0038-1101
Permalink :	http://hdl.handle.net/10993/20693

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