MSM Photodetectors Based on InP/InGaAs 2DEG Structures, in Optoelectronic Properties of Semiconductors and Superlattices

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Horstmann, M.; Marso, Michel; Kordoš, P.

1997 • Gordon and Brerach Science Publishers

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https://hdl.handle.net/10993/20692

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Disciplines :

Electrical & electronics engineering

Identifiers :

UNILU:UL-BOOK-2009-051

Author, co-author :

Horstmann, M.; Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany

Marso, Michel ; Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany

Kordoš, P.; Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany

External co-authors :

yes

Language :

English

Title :

MSM Photodetectors Based on InP/InGaAs 2DEG Structures, in Optoelectronic Properties of Semiconductors and Superlattices

Publication date :

1997

Publisher :

Gordon and Brerach Science Publishers

Collection name :

Optoelectronic Properties of Semiconductors and Superlattices, Vol. 4 Strained-Layer Quantum Wells and Their Applications

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since 31 March 2015

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