MSM Photodetectors Based on InP/InGaAs 2DEG Structures, in Optoelectronic Properties of Semiconductors and Superlattices

Reference : MSM Photodetectors Based on InP/InGaAs 2DEG Structures, in Optoelectronic Properties ...


	Document type :	Books : Book published as author, translator, etc.
	Discipline(s) :	Engineering, computing & technology : Electrical & electronics engineering
	To cite this reference:	http://hdl.handle.net/10993/20692

Title :	MSM Photodetectors Based on InP/InGaAs 2DEG Structures, in Optoelectronic Properties of Semiconductors and Superlattices
Language :	English
Author, co-author :	Horstmann, M. [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany]
	Marso, Michel [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany]
	Kordoš, P. [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany]
Publication date :	1997
Publisher :	Gordon and Brerach Science Publishers
Collection and collection volume :	Optoelectronic Properties of Semiconductors and Superlattices, Vol. 4 Strained-Layer Quantum Wells and Their Applications
Permalink :	http://hdl.handle.net/10993/20692

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